2SC2713-BL Specs and Replacement
Type Designator: 2SC2713-BL
SMD Transistor Code: DL
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 100 typ MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 350
Package: SC59
2SC2713-BL Substitution
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2SC2713-BL datasheet
2SC2713 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2713 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage V = 120 V CEO Excellent h linearity h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C High h h = 200 to 700 FE FE Low noise NF = 1dB (typ.), 10dB (max) Complementary to 2SA1163 Small pack... See More ⇒
2SC2713 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2713 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage VCEO = 120 V Excellent h linearity h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C High h h = 200 700 FE FE Low noise NF = 1dB (typ.), 10dB (max) Complementary to 2SA1163 Small package ... See More ⇒
SMD Type Transistors NPN Transistors 2SC2713 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 Features 3 High voltage VCEO = 120 V High hFE hFE = 200 700 Low noise NF = 1dB (typ.), 10dB (max) 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 Small package 1.9+0.1 -0.1 Complementary to 2SA1163 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 ... See More ⇒
Detailed specifications: 2SA1588-Y, 2SA1721O, 2SA1721R, 2SA1832GR, 2SA1832O, 2SA1832Y, 2SA2154CT-GR, 2SA2154CT-Y, 2SB817, 2SC2713-GR, 2SC3138-O, 2SC3138-Y, 2SC4117BL, 2SC4117GR, 2SC4213-A, 2SC4213-B, 2SC5066O
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