8050E Specs and Replacement
Type Designator: 8050E
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 typ MHz
Collector Capacitance (Cc): 12 typ pF
Forward Current Transfer Ratio (hFE), MIN: 300
Package: TO92
8050E Substitution
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8050E datasheet
8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit ... See More ⇒
January 2015 FDMS8050ET30 N-Channel PowerTrench MOSFET 30 V, 423 A, 0.65 m Features General Description This N-Channel MOSFET has been designed specifically to Extended TJ rating to 175 C improve the overall efficiency and to minimize switch node Max rDS(on) = 0.65 m at VGS = 10 V, ID = 55 A ringing of DC/DC converters using either synchronous or conventional switching PWM... See More ⇒
ss8050b ss8050c ss8050d ss8050e.pdf ![]()
Jiangsu Weida Semiconductor Co., Ltd. SS8050 NPN General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR MAXIMUM RATINGS(TA=25 C unless otherwise noted) Rating Symbol Value Unit VCBO 40 Collector-Base Voltage V Collector-Emitter Voltage VCEO 25 V VEBO Emitter-Base Voltage 5 V Collector Current-Continuous IC A 1.5 Total Device Dissipation... See More ⇒
Detailed specifications: 2SA733O, 2SA733Y, 2SC1815G, 2SC4379U-O, 2SC4379U-Y, 2SC4672U-H4031, 8050B, 8050D, B647, 8050U-C, 8050U-D, 8550B, 8550D, 8550E, 9012I, 9013I, 9014A
Keywords - 8050E pdf specs
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History: 2SA733O | MMBTA44 | FJV3104R
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