8550E Datasheet, Equivalent, Cross Reference Search
Type Designator: 8550E
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100(typ) MHz
Collector Capacitance (Cc): 12(typ) pF
Forward Current Transfer Ratio (hFE), MIN: 300
Noise Figure, dB: -
Package: TO92
8550E Transistor Equivalent Substitute - Cross-Reference Search
8550E Datasheet (PDF)
8550b 8550c 8550d 8550e.pdf
8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value Unit Co
s8550b s8550c s8550d s8550e.pdf
Jiangsu Weida Semiconductor Co., Ltd. S8550NPN General Purpose TransistorsTO-92P b Lead(Pb)-Free1. EMITTER122. BASE33. COLLECTORMAXIMUM RATINGS(TA=25C unless otherwise noted)Rating Symbol Value UnitVCBO40Collector-Base Voltage VCollector-Emitter Voltage VCEO 25VVEBOEmitter-Base Voltage 5 VCollector Current-ContinuousIC A1.5Total Device Dissipation T
ss8550b ss8550c ss8550d ss8550e.pdf
Jiangsu Weida Semiconductor Co., Ltd. SS8550Plastic-Encapsulate TransistorsTO-92PNP Silicon COLLECTOR32BASE11. EMITTER 2312. BASEEMITTER3. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating Symbol SS8550 UnitCollector-Emitter Voltage VCEO -25 VdcVCBOCollector-Base Voltage -40 VdcVEBOEmitter-Base Voltage -5.0 VdcCollector CurrentAdcIC -1.5Total De
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
