9014A Datasheet. Specs and Replacement
Type Designator: 9014A 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.45 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 300 typ MHz
Collector Capacitance (Cc): 6 max pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO92
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9014A datasheet
9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor 9015 is recommended. On special request, these transistors can be 1. Emitter 2. Base 3. Collector manufactured in different pin configurations. TO-92 ... See More ⇒
SEMICONDUCTOR KTC9014A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Excellent hFE Linearity hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N DIM MILLIMETERS Low Noise NF=1dB(Typ.) at f=1kHz. A 4.70 MAX E K B 4.80 MAX Complementary to KTC9015A. G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM RA... See More ⇒
Spec. No. C202A3 Issued Date 2008.01.16 CYStech Electronics Corp. Revised Date Page No. 1 / 4 General Purpose NPN Epitaxial Planar Transistor BTC9014A3 Description The BTC9014A3 is designed for use in pre-amplifier of low level and low noise. Complementary to BTA9015A3. Pb-free package Symbol Outline BTC9014A3 TO-92 B Base C Collector E Emi... See More ⇒
Detailed specifications: 8050E, 8050U-C, 8050U-D, 8550B, 8550D, 8550E, 9012I, 9013I, TIP41C, 9014B, 9014C, 9018G, BCX56-10U, BCX56-16U, MMBT3331, MMBT5401-HAF, MMBT8050CW
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