2SA1269 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA1269
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: TO92MOD
2SA1269 Transistor Equivalent Substitute - Cross-Reference Search
2SA1269 Datasheet (PDF)
2sa1263.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sa1265.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sa1264.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sa1261.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1261 DESCRIPTION With TO-220 package High switching speed Low collector saturation voltage Complement to type 2SC3157 APPLICATIONS For high voltage ,high speed and power switching applications PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-220) and symbol3 BaseAbsolu
2sa1262.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1262 DESCRIPTION With TO-220 package Complement to type 2SC3179 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-220) and symbolAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT
2sa1263n.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1263N DESCRIPTION With TO-3P(I) package Complement to type 2SC3180N 2SA1263 with short pin APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 BaseAbsolute maximum ratings(Ta=25) S
2sa1265n.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1265N DESCRIPTION With TO-3P(I) package Complement to type 2SC3182 2SA1265 with short pin APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 BaseAbsolute maximum ratings(Ta=25) SY
2sa1264n.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1264N DESCRIPTION With TO-3P(I) package Complement to type 2SC3181N 2SA1264 with short pin APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 BaseAbsolute maximum ratings(Ta=25) S
2sa1262.pdf
2SA1262Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3179)Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-25(TO220)Unit SymbolSymbol 2SA1262 Conditions 2SA1262 Unit0.24.80.210.2VCBO V ICBO VCB=60V 100max A60 2.00.1VCEO V IEBO VEB=6V 100max
2sa1264r 2sa1264o.pdf
SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1264DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -6ACE(sat) CGood Linearity of hFEComplement to Type 2SC3181APPLICATIONSPower amplifier applicationsRecommend for 55W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
2sa1261m 2sa1261l 2sa1261k.pdf
SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1261DESCRIPTIONLow Collector Saturation Voltage-: V = -0.6V(Max.)@I = -5ACE(sat) CFast Switching SpeedComplement to Type 2SC3157APPLICATIONSDeveloped for high-voltage high-speed switching, and isideal for use as a driver in devices such as switching reg-lators, DC/DC converters, and high frequency p
2sa1265r 2sa1265o.pdf
SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1265DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -7ACE(sat) CGood Linearity of hFEComplement to Type 2SC3182APPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
2sa1261.pdf
isc Silicon PNP Power Transistor 2SA1261DESCRIPTIONLow Collector Saturation Voltage-: V = -0.6V(Max.)@I = -5ACE(sat) CFast Switching SpeedComplement to Type 2SC3157Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDeveloped for high-voltage high-speed switching, and isideal for use as a driver in devices such as switchin
2sa1262.pdf
isc Silicon PNP Power Transistor 2SA1262DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min.)(BR)CEOLow Collector Saturation Voltage: V = -0.6V(Max.)@I = -2ACE(sat) CComplement to Type 2SC3179Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIM
2sa1261-z.pdf
isc Silicon PNP Power Transistor 2SA1261-ZDESCRIPTIONHigh switching speedLow Collector-Emitter Saturation Voltage-: VCE(sat)= -0.6V(Max)@ IC= -5A100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationComplementary to 2SC3157APPLICATIONSHigh speed high voltage switching industrial useDC/DC convertersABSOLUTE MAX
2sa1263.pdf
isc Silicon PNP Power Transistor 2SA1263DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -5ACE(sat) CGood Linearity of hFEComplement to Type 2SC3180Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 40W high fidelity audio frequencyamplifier output stage app
2sa1263n.pdf
isc Silicon PNP Power Transistor 2SA1263NDESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -5ACE(sat) CGood Linearity of hFEComplement to Type 2SC3180NMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 40W high fidelity audio frequencyamplifier output stage a
2sa1265.pdf
isc Silicon PNP Power Transistor 2SA1265DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -7ACE(sat) CGood Linearity of hFEComplement to Type 2SC3182Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage app
2sa1264.pdf
isc Silicon PNP Power Transistor 2SA1264DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -6ACE(sat) CGood Linearity of hFEComplement to Type 2SC3181Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 55W high fidelity audio frequencyamplifier output stage app
2sa1265n.pdf
isc Silicon PNP Power Transistor 2SA1265NDESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -7ACE(sat) CGood Linearity of hFEComplement to Type 2SC3182NMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage a
2sa1264n.pdf
isc Silicon PNP Power Transistor 2SA1264NDESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -6ACE(sat) CGood Linearity of hFEComplement to Type 2SC3181NMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 55W high fidelity audio frequencyamplifier output stage a
Datasheet: 2SA1264NR , 2SA1265 , 2SA1265N , 2SA1265NO , 2SA1265NR , 2SA1266 , 2SA1267 , 2SA1268 , TIP142 , 2SA127 , 2SA1270 , 2SA1271 , 2SA1272 , 2SA1273 , 2SA1274 , 2SA1275 , 2SA1276 .
