2SA1269 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1269 📄📄
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 120 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 100 MHz
Ganancia de corriente contínua (hFE): 90
Encapsulados: TO92MOD
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2SA1269 datasheet
8.1. Size:94K toshiba
2sa1263.pdf 
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2sa1265.pdf
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2sa1264.pdf
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8.5. Size:160K jmnic
2sa1261.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1261 DESCRIPTION With TO-220 package High switching speed Low collector saturation voltage Complement to type 2SC3157 APPLICATIONS For high voltage ,high speed and power switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-220) and symbol 3 Base Absolu
8.6. Size:183K jmnic
2sa1262.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1262 DESCRIPTION With TO-220 package Complement to type 2SC3179 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT
8.7. Size:198K jmnic
2sa1263n.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1263N DESCRIPTION With TO-3P(I) package Complement to type 2SC3180N 2SA1263 with short pin APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 Base Absolute maximum ratings(Ta=25 ) S
8.8. Size:201K jmnic
2sa1265n.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1265N DESCRIPTION With TO-3P(I) package Complement to type 2SC3182 2SA1265 with short pin APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 Base Absolute maximum ratings(Ta=25 ) SY
8.9. Size:198K jmnic
2sa1264n.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1264N DESCRIPTION With TO-3P(I) package Complement to type 2SC3181N 2SA1264 with short pin APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 Base Absolute maximum ratings(Ta=25 ) S
8.12. Size:195K cn sptech
2sa1264r 2sa1264o.pdf
SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1264 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -6A CE(sat) C Good Linearity of h FE Complement to Type 2SC3181 APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB
8.13. Size:195K cn sptech
2sa1261m 2sa1261l 2sa1261k.pdf
SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1261 DESCRIPTION Low Collector Saturation Voltage- V = -0.6V(Max.)@I = -5A CE(sat) C Fast Switching Speed Complement to Type 2SC3157 APPLICATIONS Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reg- lators, DC/DC converters, and high frequency p
8.14. Size:195K cn sptech
2sa1265r 2sa1265o.pdf
SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1265 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -7A CE(sat) C Good Linearity of h FE Complement to Type 2SC3182 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB
8.15. Size:219K inchange semiconductor
2sa1261.pdf
isc Silicon PNP Power Transistor 2SA1261 DESCRIPTION Low Collector Saturation Voltage- V = -0.6V(Max.)@I = -5A CE(sat) C Fast Switching Speed Complement to Type 2SC3157 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switchin
8.16. Size:214K inchange semiconductor
2sa1262.pdf
isc Silicon PNP Power Transistor 2SA1262 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min.) (BR)CEO Low Collector Saturation Voltage V = -0.6V(Max.)@I = -2A CE(sat) C Complement to Type 2SC3179 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIM
8.17. Size:186K inchange semiconductor
2sa1261-z.pdf
isc Silicon PNP Power Transistor 2SA1261-Z DESCRIPTION High switching speed Low Collector-Emitter Saturation Voltage- VCE(sat)= -0.6V(Max)@ IC= -5A 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation Complementary to 2SC3157 APPLICATIONS High speed high voltage switching industrial use DC/DC converters ABSOLUTE MAX
8.18. Size:221K inchange semiconductor
2sa1263.pdf
isc Silicon PNP Power Transistor 2SA1263 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -5A CE(sat) C Good Linearity of h FE Complement to Type 2SC3180 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage app
8.19. Size:222K inchange semiconductor
2sa1263n.pdf
isc Silicon PNP Power Transistor 2SA1263N DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -5A CE(sat) C Good Linearity of h FE Complement to Type 2SC3180N Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage a
8.20. Size:220K inchange semiconductor
2sa1265.pdf
isc Silicon PNP Power Transistor 2SA1265 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -7A CE(sat) C Good Linearity of h FE Complement to Type 2SC3182 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage app
8.21. Size:220K inchange semiconductor
2sa1264.pdf
isc Silicon PNP Power Transistor 2SA1264 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -6A CE(sat) C Good Linearity of h FE Complement to Type 2SC3181 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage app
8.22. Size:222K inchange semiconductor
2sa1265n.pdf
isc Silicon PNP Power Transistor 2SA1265N DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -7A CE(sat) C Good Linearity of h FE Complement to Type 2SC3182N Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage a
8.23. Size:222K inchange semiconductor
2sa1264n.pdf
isc Silicon PNP Power Transistor 2SA1264N DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -6A CE(sat) C Good Linearity of h FE Complement to Type 2SC3181N Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage a
Otros transistores... 2SA1264NR, 2SA1265, 2SA1265N, 2SA1265NO, 2SA1265NR, 2SA1266, 2SA1267, 2SA1268, BC556, 2SA127, 2SA1270, 2SA1271, 2SA1272, 2SA1273, 2SA1274, 2SA1275, 2SA1276
