All Transistors. MMBT9012H-H35 Datasheet

 

MMBT9012H-H35 Datasheet and Replacement


   Type Designator: MMBT9012H-H35
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 230
   Noise Figure, dB: -
   Package: TO236
 

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MMBT9012H-H35 Datasheet (PDF)

 ..1. Size:120K  semtech
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MMBT9012H-H35

MMBT9012H-H35 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 500 mA Power Dissipation Ptot 200 mWJunction Temperature Tj 150

 3.1. Size:120K  semtech
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MMBT9012H-H35

MMBT9012H-H23 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 500 mA Power Dissipation Ptot 200 mWOJunction Temperature Tj 150 C

 5.1. Size:173K  semtech
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MMBT9012H-H35

MMBT9012 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 500 mA Power Dissipation Ptot 200 mWOJunction Temperature Tj 150 C O

 5.2. Size:1743K  pjsemi
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MMBT9012H-H35

MMBT9012 PNP Transistor Features SOT-23 For Switching and AF Amplifer Applications.Equivalent Circuit 1.Base 2.Emitter 3.Collector3.CollectorMarking Code : MMBT9012G : K2 1.BaseMMBT9012H : K32. Emitter.Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified.Parameter Symbol Value UnitCollector Base Voltage -V 40 VCBOCollec

Datasheet: 9018G , BCX56-10U , BCX56-16U , MMBT3331 , MMBT5401-HAF , MMBT8050CW , MMBT8050DW , MMBT9012H-H23 , 13007 , MMBT9013G , MMBT9013H , MMBT9013H-H23 , MMBT9014B , MMBT9014C , MMBT9014C1 , MMBT9014D , MMBT9015B .

History: 2SC3752M | TA1828 | 2SC295 | BDW44 | 2SC2944 | KSC5326 | 2SC4293

Keywords - MMBT9012H-H35 transistor datasheet

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 MMBT9012H-H35 equivalent finder
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 MMBT9012H-H35 replacement

 

 
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