MMBTSA812L Datasheet. Specs and Replacement

Type Designator: MMBTSA812L  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 180 typ MHz

Collector Capacitance (Cc): 4.5 pF

Forward Current Transfer Ratio (hFE), MIN: 300

Noise Figure, dB: -

Package: SOT23

 MMBTSA812L Substitution

- BJT ⓘ Cross-Reference Search

 

MMBTSA812L datasheet

 ..1. Size:345K  semtech

 mmbtsa812o mmbtsa812y mmbtsa812g mmbtsa812l.pdf pdf_icon

MMBTSA812L

MMBTSA812 PNP Silicon Epitaxial Planar Transistor for audio frequency, general purpose amplifier. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 5... See More ⇒

 8.1. Size:187K  semtech

 mmbtsa1504o mmbtsa1504y mmbtsa1504g.pdf pdf_icon

MMBTSA812L

MMBTSA1504 PNP Silicon Epitaxial Planar Transistor For switching and general purpose applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO ... See More ⇒

 8.2. Size:149K  semtech

 mmbtsa733r mmbtsa733o mmbtsa733y mmbtsa733p mmbtsa733l.pdf pdf_icon

MMBTSA812L

MMBTSA733 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the NPN transistor MMBTSC945 is recommended. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO ... See More ⇒

 8.3. Size:739K  cn cbi

 mmbtsa1576w.pdf pdf_icon

MMBTSA812L

PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups Q, R and S according to its DC current gain. O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 150 mA Power Dissipation Ptot 200 mW O Junction Temperatur... See More ⇒

SHOW MORE

Detailed specifications: MMBTSA1504O, MMBTSA1504Y, MMBTSA733L, MMBTSA733O, MMBTSA733P, MMBTSA733R, MMBTSA733Y, MMBTSA812G, 2SC4793, MMBTSA812O, MMBTSA812Y, MMBTSC1623G, MMBTSC1623L, MMBTSC1623O, MMBTSC1623Y, MMBTSC1815G, MMBTSC1815L

Keywords - MMBTSA812L pdf specs

 MMBTSA812L cross reference

 MMBTSA812L equivalent finder

 MMBTSA812L pdf lookup

 MMBTSA812L substitution

 MMBTSA812L replacement