MMBTSA812Y Datasheet, Equivalent, Cross Reference Search
Type Designator: MMBTSA812Y
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 180(typ) MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 135
Noise Figure, dB: -
Package: SOT23
MMBTSA812Y Transistor Equivalent Substitute - Cross-Reference Search
MMBTSA812Y Datasheet (PDF)
mmbtsa812o mmbtsa812y mmbtsa812g mmbtsa812l.pdf
MMBTSA812 PNP Silicon Epitaxial Planar Transistor for audio frequency, general purpose amplifier. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. 1.Base 2.Emitter 3.CollectorSOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 5
mmbtsa1504o mmbtsa1504y mmbtsa1504g.pdf
MMBTSA1504 PNP Silicon Epitaxial Planar Transistor For switching and general purpose applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 50 VCollector Emitter Voltage -VCEO 50 VEmitter Base Voltage -VEBO
mmbtsa733r mmbtsa733o mmbtsa733y mmbtsa733p mmbtsa733l.pdf
MMBTSA733 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the NPN transistor MMBTSC945 is recommended. TO-236 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO
mmbtsa1576w.pdf
PNP Silicon Epitaxial Planar TransistorThe transistor is subdivided into three groups Q, R and S according to its DC current gain. OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 60 VCollector Emitter Voltage -VCEO 50 VEmitter Base Voltage -VEBO 6 VCollector Current -IC 150 mAPower Dissipation Ptot 200 mW OJunction Temperatur
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
