All Transistors. MMBTSC1815L Datasheet

 

MMBTSC1815L Datasheet and Replacement


   Type Designator: MMBTSC1815L
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 3(max) pF
   Forward Current Transfer Ratio (hFE), MIN: 350
   Noise Figure, dB: -
   Package: TO236
 

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MMBTSC1815L Datasheet (PDF)

 ..1. Size:141K  semtech
mmbtsc1815o mmbtsc1815y mmbtsc1815g mmbtsc1815l.pdf pdf_icon

MMBTSC1815L

MMBTSC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA1015 is recommended. TO-236 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO

 7.1. Size:206K  semtech
mmbtsc1623o mmbtsc1623y mmbtsc1623g mmbtsc1623l.pdf pdf_icon

MMBTSC1815L

MMBTSC1623 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain SOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 50 VEmitter Base Voltage VEBO 5 V

 7.2. Size:731K  pjsemi
mmbtsc1623-l4 mmbtsc1623-l5 mmbtsc1623-l6 mmbtsc1623-l7.pdf pdf_icon

MMBTSC1815L

MMBTSC1623 NPN Transistor Features SOT-23 High DC Current gain. High voltage1.Base 2.Emitter 3.CollectorMarking Code: L4: L4. L5: L5. L6: L6. L7: L7. Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 60 V CBOCollector Emitter Voltage V 50 V CEOEmitter Base V

 8.1. Size:282K  semtech
mmbtsc4098w.pdf pdf_icon

MMBTSC1815L

MMBTSC4098W NPN Silicon Epitaxial Planar Transistor for AM/FM amplifier and local oscillator of FM/VHF tuner applications. OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 25 VEmitter Base Voltage VEBO 5 VCollector Current IC 50 mA Power Dissipation Ptot 200 mWOJunction Temperature Tj 150 C

Datasheet: MMBTSA812L , MMBTSA812O , MMBTSA812Y , MMBTSC1623G , MMBTSC1623L , MMBTSC1623O , MMBTSC1623Y , MMBTSC1815G , 2SC1815 , MMBTSC1815O , MMBTSC1815Y , MMBTSC3356Q , MMBTSC3356R , MMBTSC3356S , MMBTSC4098W , MMBTSC945L , MMBTSC945O .

History: KT8121B-1 | BUY68-16 | 2SD904 | DSC2G03

Keywords - MMBTSC1815L transistor datasheet

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