All Transistors. MMBTSC4098W Datasheet

 

MMBTSC4098W Datasheet and Replacement


   Type Designator: MMBTSC4098W
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 1.3 pF
   Forward Current Transfer Ratio (hFE), MIN: 82
   Noise Figure, dB: -
   Package: SOT323
 

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MMBTSC4098W Datasheet (PDF)

 ..1. Size:282K  semtech
mmbtsc4098w.pdf pdf_icon

MMBTSC4098W

MMBTSC4098W NPN Silicon Epitaxial Planar Transistor for AM/FM amplifier and local oscillator of FM/VHF tuner applications. OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 25 VEmitter Base Voltage VEBO 5 VCollector Current IC 50 mA Power Dissipation Ptot 200 mWOJunction Temperature Tj 150 C

 6.1. Size:1050K  cn cbi
mmbtsc4081w.pdf pdf_icon

MMBTSC4098W

NPN Silicon Epitaxial Planar TransistorThe transistor is subdivided into three groups Q, R and S according to its DC current gain. OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 50 VEmitter Base Voltage VEBO 7 VCollector Current IC 150 mAPower Dissipation Ptot 200 mW OJunction Temperature Tj

 8.1. Size:141K  semtech
mmbtsc1815o mmbtsc1815y mmbtsc1815g mmbtsc1815l.pdf pdf_icon

MMBTSC4098W

MMBTSC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA1015 is recommended. TO-236 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO

 8.2. Size:206K  semtech
mmbtsc1623o mmbtsc1623y mmbtsc1623g mmbtsc1623l.pdf pdf_icon

MMBTSC4098W

MMBTSC1623 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain SOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 50 VEmitter Base Voltage VEBO 5 V

Datasheet: MMBTSC1623Y , MMBTSC1815G , MMBTSC1815L , MMBTSC1815O , MMBTSC1815Y , MMBTSC3356Q , MMBTSC3356R , MMBTSC3356S , BC558 , MMBTSC945L , MMBTSC945O , MMBTSC945P , MMBTSC945R , MMBTSC945Y , ST2SD1664U-P , ST2SD1664U-Q , ST2SD1664U-R .

History: MT3S21P

Keywords - MMBTSC4098W transistor datasheet

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