All Transistors. ST2SD1664U-P Datasheet

 

ST2SD1664U-P Datasheet and Replacement


   Type Designator: ST2SD1664U-P
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 32 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150(typ) MHz
   Collector Capacitance (Cc): 15 pF
   Forward Current Transfer Ratio (hFE), MIN: 82
   Noise Figure, dB: -
   Package: SOT89
 

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ST2SD1664U-P Datasheet (PDF)

 ..1. Size:391K  semtech
 st2sd1664u-p st2sd1664u-q st2sd1664u-r.pdf pdf_icon

ST2SD1664U-P

ST 2SD1664U NPN SILICON EPITAXIAL MEDIUM POWER TRANSISTOR Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 32 VEmitter Base Voltage VEBO 5 VCollector Current - DC IC 1 A Collector Current - Pulse 1) ICP 2 A 0.5 Ptot W Total Power Dissipation2 2) Junction Temperature TJ 150 Storage Te

 4.1. Size:560K  semtech
 st2sd1664u.pdf pdf_icon

ST2SD1664U-P

ST 2SD1664U NPN SILICON EPITAXIAL MEDIUM POWER TRANSISTOR Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 32 VEmitter Base Voltage VEBO 5 VCollector Current - DC IC 1 A Collector Current - Pulse 1) ICP 2 A 0.5 Ptot W Total Power Dissipation2 2) Junction Temperature TJ 150 Storage Te

 7.1. Size:350K  semtech
 st2sd1691t.pdf pdf_icon

ST2SD1664U-P

ST 2SD1691T NPN Silicon Epitaxial Power Transistor For Low-Frequencey Power Amplifiers and Mid-Speed Switching The transistor is subdivided into three groups, M, L and K, according to its DC-DC current gain. ECBTO-126 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Symbol Value UnitParameter VCBO 60 VCollector to Base Voltage VCEO 60 VCollector to Emitter

 8.1. Size:551K  semtech
 st2sd1760u.pdf pdf_icon

ST2SD1664U-P

ST 2SD1760U NPN Silicon Epitaxial Planar Transistor Power Transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 45 VEmitter Base Voltage VEBO 5 VCollector Current - DC IC 3 A Collector Current - Pulse 1) ICP 4.5 PC 1 WCollector Power Dissipation Junction Temperature TJ 150 Stor

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Datasheet: MMBTSC3356R , MMBTSC3356S , MMBTSC4098W , MMBTSC945L , MMBTSC945O , MMBTSC945P , MMBTSC945R , MMBTSC945Y , TIP127 , ST2SD1664U-Q , ST2SD1664U-R , MRF534 , MRF536 , MRF0211LT1 , MRF1000MA , MRF10070 , MRF1029 .

History: BF759EA | CMBT2222A | IMBT4402 | BCV49

Keywords - ST2SD1664U-P transistor datasheet

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