MRF536 Specs and Replacement
Type Designator: MRF536
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 4.5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5000 MHz
Collector Capacitance (Cc): 1.3 max pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: MACRO-X
MRF536 Substitution
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MRF536 datasheet
Detailed specifications: MMBTSC945O, MMBTSC945P, MMBTSC945R, MMBTSC945Y, ST2SD1664U-P, ST2SD1664U-Q, ST2SD1664U-R, MRF534, 2SB817, MRF0211LT1, MRF1000MA, MRF10070, MRF1029, MRF1030, MRF1031, MRF1032, MRF1035MA
Keywords - MRF536 pdf specs
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