MRF2947AT1 Datasheet, Equivalent, Cross Reference Search
Type Designator: MRF2947AT1
SMD Transistor Code: WU
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.188 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 9000 MHz
Collector Capacitance (Cc): 0.42 pF
Forward Current Transfer Ratio (hFE), MIN: 75
Noise Figure, dB: -
Package: SOT363
MRF2947AT1 Transistor Equivalent Substitute - Cross-Reference Search
MRF2947AT1 Datasheet (PDF)
mrf2947at1 mrf2947at2 mrf2947rat1 mrf2947rat2.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF2947/DThe RF LineNPN SiliconMRF2947AT1,T2MRF2947RAT1,T2Low Noise TransistorsMotorolas MRF2947 device contains two high performance, lownoise NPNsilicon bipolar transistors. This device has two 941 die housed in the highperformance six leaded SC70ML package; yielding a 9 GHz currentgainbandwidth prod
mrf2947rev0.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF2947/DThe RF LineNPN SiliconMRF2947AT1,T2MRF2947RAT1,T2Low Noise TransistorsMotorolas MRF2947 device contains two high performance, lownoise NPNsilicon bipolar transistors. This device has two 941 die housed in the highperformance six leaded SC70ML package; yielding a 9 GHz currentgainbandwidth prod
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
