MRF2947AT1 Todos los transistores

 

MRF2947AT1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MRF2947AT1
   Código: WU
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.188 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 10 V
   Tensión emisor-base (Veb): 1.5 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 9000 MHz
   Capacitancia de salida (Cc): 0.42 pF
   Ganancia de corriente contínua (hfe): 75
   Paquete / Cubierta: SOT363

 Búsqueda de reemplazo de transistor bipolar MRF2947AT1

 

MRF2947AT1 Datasheet (PDF)

 ..1. Size:181K  motorola
 mrf2947at1 mrf2947at2 mrf2947rat1 mrf2947rat2.pdf pdf_icon

MRF2947AT1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF2947/D The RF Line NPN Silicon MRF2947AT1,T2 MRF2947RAT1,T2 Low Noise Transistors Motorola s MRF2947 device contains two high performance, low noise NPN silicon bipolar transistors. This device has two 941 die housed in the high performance six leaded SC 70ML package; yielding a 9 GHz current gain bandwidth prod

 7.1. Size:181K  motorola
 mrf2947rev0.pdf pdf_icon

MRF2947AT1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF2947/D The RF Line NPN Silicon MRF2947AT1,T2 MRF2947RAT1,T2 Low Noise Transistors Motorola s MRF2947 device contains two high performance, low noise NPN silicon bipolar transistors. This device has two 941 die housed in the high performance six leaded SC 70ML package; yielding a 9 GHz current gain bandwidth prod

Otros transistores... MRF15060 , MRF15060S , MRF15090 , MRF16030 , MRF2000-5L , MRF20030 , MRF20060 , MRF20060S , MPSA42 , MRF2947AT2 , MRF2947RAT1 , MRF2947RAT2 , MRF3094 , MRF3095 , MRF3096 , MRF3104 , MRF3105 .

History: 2SA1878 | 2SC3014

 

 
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