MRF2947AT2 Datasheet, Equivalent, Cross Reference Search
Type Designator: MRF2947AT2
SMD Transistor Code: WU
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.188 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 9000 MHz
Collector Capacitance (Cc): 0.42 pF
Forward Current Transfer Ratio (hFE), MIN: 75
Noise Figure, dB: -
Package: SOT363
MRF2947AT2 Transistor Equivalent Substitute - Cross-Reference Search
MRF2947AT2 Datasheet (PDF)
mrf2947at1 mrf2947at2 mrf2947rat1 mrf2947rat2.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF2947/DThe RF LineNPN SiliconMRF2947AT1,T2MRF2947RAT1,T2Low Noise TransistorsMotorolas MRF2947 device contains two high performance, lownoise NPNsilicon bipolar transistors. This device has two 941 die housed in the highperformance six leaded SC70ML package; yielding a 9 GHz currentgainbandwidth prod
mrf2947rev0.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF2947/DThe RF LineNPN SiliconMRF2947AT1,T2MRF2947RAT1,T2Low Noise TransistorsMotorolas MRF2947 device contains two high performance, lownoise NPNsilicon bipolar transistors. This device has two 941 die housed in the highperformance six leaded SC70ML package; yielding a 9 GHz currentgainbandwidth prod
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
