All Transistors. MRF2947AT2 Datasheet

 

MRF2947AT2 Datasheet and Replacement


   Type Designator: MRF2947AT2
   SMD Transistor Code: WU
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.188 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Maximum Emitter-Base Voltage |Veb|: 1.5 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 9000 MHz
   Collector Capacitance (Cc): 0.42 pF
   Forward Current Transfer Ratio (hFE), MIN: 75
   Noise Figure, dB: -
   Package: SOT363
 

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MRF2947AT2 Datasheet (PDF)

 ..1. Size:181K  motorola
 mrf2947at1 mrf2947at2 mrf2947rat1 mrf2947rat2.pdf pdf_icon

MRF2947AT2

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF2947/DThe RF LineNPN SiliconMRF2947AT1,T2MRF2947RAT1,T2Low Noise TransistorsMotorolas MRF2947 device contains two high performance, lownoise NPNsilicon bipolar transistors. This device has two 941 die housed in the highperformance six leaded SC70ML package; yielding a 9 GHz currentgainbandwidth prod

 7.1. Size:181K  motorola
 mrf2947rev0.pdf pdf_icon

MRF2947AT2

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF2947/DThe RF LineNPN SiliconMRF2947AT1,T2MRF2947RAT1,T2Low Noise TransistorsMotorolas MRF2947 device contains two high performance, lownoise NPNsilicon bipolar transistors. This device has two 941 die housed in the highperformance six leaded SC70ML package; yielding a 9 GHz currentgainbandwidth prod

Datasheet: MRF15060S , MRF15090 , MRF16030 , MRF2000-5L , MRF20030 , MRF20060 , MRF20060S , MRF2947AT1 , B647 , MRF2947RAT1 , MRF2947RAT2 , MRF3094 , MRF3095 , MRF3096 , MRF3104 , MRF3105 , MRF3106 .

Keywords - MRF2947AT2 transistor datasheet

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