MRF2947RAT1 Specs and Replacement

Type Designator: MRF2947RAT1

SMD Transistor Code: XR

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.188 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Maximum Emitter-Base Voltage |Veb|: 1.5 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 9000 MHz

Collector Capacitance (Cc): 0.42 pF

Forward Current Transfer Ratio (hFE), MIN: 75

Noise Figure, dB: -

Package: SOT363

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MRF2947RAT1 datasheet

 ..1. Size:181K  motorola

 mrf2947at1 mrf2947at2 mrf2947rat1 mrf2947rat2.pdf pdf_icon

MRF2947RAT1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF2947/D The RF Line NPN Silicon MRF2947AT1,T2 MRF2947RAT1,T2 Low Noise Transistors Motorola s MRF2947 device contains two high performance, low noise NPN silicon bipolar transistors. This device has two 941 die housed in the high performance six leaded SC 70ML package; yielding a 9 GHz current gain bandwidth prod... See More ⇒

 6.1. Size:181K  motorola

 mrf2947rev0.pdf pdf_icon

MRF2947RAT1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF2947/D The RF Line NPN Silicon MRF2947AT1,T2 MRF2947RAT1,T2 Low Noise Transistors Motorola s MRF2947 device contains two high performance, low noise NPN silicon bipolar transistors. This device has two 941 die housed in the high performance six leaded SC 70ML package; yielding a 9 GHz current gain bandwidth prod... See More ⇒

Detailed specifications: MRF15090, MRF16030, MRF2000-5L, MRF20030, MRF20060, MRF20060S, MRF2947AT1, MRF2947AT2, 431, MRF2947RAT2, MRF3094, MRF3095, MRF3096, MRF3104, MRF3105, MRF3106, MRF338

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