MRF338 Specs and Replacement
Type Designator: MRF338
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 9 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 470 MHz
Collector Capacitance (Cc): 95 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: CASE333-04
MRF338 Substitution
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MRF338 datasheet
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF338/D The RF Line NPN Silicon RF Power Transistor MRF338 Designed primarily for wideband large signal output and driver amplifier stages in the 400 to 512 MHz frequency range. Specified 28 Volt, 470 MHz Characteristics Output Power = 80 Watts Minimum Gain = 7.3 dB Efficiency = 50% (Min) 80 W, 400 to 512 MHz CONTR... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF338/D The RF Line NPN Silicon RF Power Transistor MRF338 Designed primarily for wideband large signal output and driver amplifier stages in the 400 to 512 MHz frequency range. Specified 28 Volt, 470 MHz Characteristics Output Power = 80 Watts Minimum Gain = 7.3 dB Efficiency = 50% (Min) 80 W, 400 to 512 MHz CONTR... See More ⇒
Detailed specifications: MRF2947RAT1, MRF2947RAT2, MRF3094, MRF3095, MRF3096, MRF3104, MRF3105, MRF3106, A42, MRF4427R2, MRF553, MRF557, MRF5583, MRF559, MRF5812, MRF5811LT1, MRF5943
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