MRF338 Datasheet and Replacement
Type Designator: MRF338
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 9 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 470 MHz
Collector Capacitance (Cc): 95 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: CASE333-04
MRF338 Substitution
MRF338 Datasheet (PDF)
mrf338.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF338/DThe RF LineNPN Silicon RF Power TransistorMRF338Designed primarily for wideband largesignal output and driver amplifierstages in the 400 to 512 MHz frequency range. Specified 28 Volt, 470 MHz CharacteristicsOutput Power = 80 WattsMinimum Gain = 7.3 dBEfficiency = 50% (Min) 80 W, 400 to 512 MHzCONTR
mrf338rev2.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF338/DThe RF LineNPN Silicon RF Power TransistorMRF338Designed primarily for wideband largesignal output and driver amplifierstages in the 400 to 512 MHz frequency range. Specified 28 Volt, 470 MHz CharacteristicsOutput Power = 80 WattsMinimum Gain = 7.3 dBEfficiency = 50% (Min) 80 W, 400 to 512 MHzCONTR
Datasheet: MRF2947RAT1 , MRF2947RAT2 , MRF3094 , MRF3095 , MRF3096 , MRF3104 , MRF3105 , MRF3106 , 2N2907 , MRF4427R2 , MRF553 , MRF557 , MRF5583 , MRF559 , MRF5812 , MRF5811LT1 , MRF5943 .
Keywords - MRF338 transistor datasheet
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