All Transistors. MRF338 Datasheet

 

MRF338 Datasheet and Replacement


   Type Designator: MRF338
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 250 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 9 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 470 MHz
   Collector Capacitance (Cc): 95 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: CASE333-04
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MRF338 Datasheet (PDF)

 ..1. Size:132K  motorola
 mrf338.pdf pdf_icon

MRF338

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF338/DThe RF LineNPN Silicon RF Power TransistorMRF338Designed primarily for wideband largesignal output and driver amplifierstages in the 400 to 512 MHz frequency range. Specified 28 Volt, 470 MHz CharacteristicsOutput Power = 80 WattsMinimum Gain = 7.3 dBEfficiency = 50% (Min) 80 W, 400 to 512 MHzCONTR

 0.1. Size:132K  motorola
 mrf338rev2.pdf pdf_icon

MRF338

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF338/DThe RF LineNPN Silicon RF Power TransistorMRF338Designed primarily for wideband largesignal output and driver amplifierstages in the 400 to 512 MHz frequency range. Specified 28 Volt, 470 MHz CharacteristicsOutput Power = 80 WattsMinimum Gain = 7.3 dBEfficiency = 50% (Min) 80 W, 400 to 512 MHzCONTR

Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , D667 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .

History: KT8107D2 | BC807-40WT1 | 2SC170 | UN9217R | 2N1056 | 2SC999A | ECG2306

Keywords - MRF338 transistor datasheet

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