MRF837 Datasheet, Equivalent, Cross Reference Search

   Type Designator: MRF837
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.88 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector-Emitter Voltage |Vce|: 16 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 870 MHz
   Collector Capacitance (Cc): 1.8 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: MACRO-X

MRF837 Transistor Equivalent Substitute - Cross-Reference Search

MRF837 Datasheet (PDF)

..1. Size:181K motorola
mrf837.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF837/DThe RF LineNPN SiliconMRF837RF Low Power TransistorMRF8372, R1, R2Designed primarily for wideband large signal predriver stages in 800 MHzand UHF frequency ranges. Specified @ 12.5 V, 870 MHz CharacteristicsOutput Power = 750 mW750 mW, 870 MHzMinimum Gain = 8.0 dBRF LOW POWEREfficiency 60% (Typ)

0.1. Size:101K motorola
mrf8372r1 mrf8372r2.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF8372/DThe RF LineNPN SiliconMRF8372R1, R2RF Low Power TransistorDesigned primarily for wideband large signal predriver stages in 800 MHzand UHF frequency ranges. Specified @ 12.5 V, 870 MHz CharacteristicsOutput Power = 750 mW750 mW, 870 MHzMinimum Gain = 8.0 dBRF LOW POWEREfficiency 60% (Typ)TRANSIS

0.2. Size:181K motorola
mrf837re.pdf