MRF837 Datasheet. Specs and Replacement

Type Designator: MRF837  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.88 W

Maximum Collector-Base Voltage |Vcb|: 36 V

Maximum Collector-Emitter Voltage |Vce|: 16 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 870 MHz

Collector Capacitance (Cc): 1.8 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: MACRO-X

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MRF837 datasheet

 ..1. Size:181K  motorola

 mrf837.pdf pdf_icon

MRF837

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF837/D The RF Line NPN Silicon MRF837 RF Low Power Transistor MRF8372, R1, R2 Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW 750 mW, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ)... See More ⇒

 0.1. Size:101K  motorola

 mrf8372r1 mrf8372r2.pdf pdf_icon

MRF837

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF8372/D The RF Line NPN Silicon MRF8372R1, R2 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW 750 mW, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ) TRANSIS... See More ⇒

 0.2. Size:181K  motorola

 mrf837re.pdf pdf_icon

MRF837

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF837/D The RF Line NPN Silicon MRF837 RF Low Power Transistor MRF8372, R1, R2 Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW 750 mW, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ)... See More ⇒

 0.3. Size:101K  motorola

 mrf8372rev0.pdf pdf_icon

MRF837

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF8372/D The RF Line NPN Silicon MRF8372R1, R2 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW 750 mW, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ) TRANSIS... See More ⇒

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Detailed specifications: MRF5811LT1, MRF5943, MRF6402, MRF6404, MRF6404K, MRF6408, MRF6409, MRF653S, 2N3055, MRF8372R1, MRF8372R2, MRF847, MRF857, MRF858, MRF858S, MRF859, MRF859S

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