MRF837 Datasheet and Replacement

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF837/D The RF Line NPN Silicon MRF837 RF Low Power Transistor MRF8372, R1, R2 Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW 750 mW, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ)... See More ⇒

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF8372/D The RF Line NPN Silicon MRF8372R1, R2 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW 750 mW, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ) TRANSIS... See More ⇒

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF837/D The RF Line NPN Silicon MRF837 RF Low Power Transistor MRF8372, R1, R2 Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW 750 mW, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ)... See More ⇒

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF8372/D The RF Line NPN Silicon MRF8372R1, R2 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW 750 mW, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ) TRANSIS... See More ⇒