MRF880 Specs and Replacement

Type Designator: MRF880

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 140 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 28 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 960 MHz

Collector Capacitance (Cc): 45 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: CASE375A-01

 MRF880 Substitution

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MRF880 datasheet

 ..1. Size:142K  motorola

 mrf880.pdf pdf_icon

MRF880

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF880/D The RF Line NPN Silicon MRF880 RF Power Transistor Designed for 26 V UHF large signal, common emitter, class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800 960 MHz. Specified 26 V, 900 MHz Characteristics Output Power = 90 Watts 90 W, 900 MHz Ga... See More ⇒

 0.1. Size:142K  motorola

 mrf880re.pdf pdf_icon

MRF880

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF880/D The RF Line NPN Silicon MRF880 RF Power Transistor Designed for 26 V UHF large signal, common emitter, class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800 960 MHz. Specified 26 V, 900 MHz Characteristics Output Power = 90 Watts 90 W, 900 MHz Ga... See More ⇒

Detailed specifications: MRF857, MRF858, MRF858S, MRF859, MRF859S, MRF860, MRF861, MRF862, D882, MRF890, MRF892, MRF896, MRF898, MRF911, MRF917T1, MRF927T1, MRF927T3

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