MRF880 Datasheet, Equivalent, Cross Reference Search
Type Designator: MRF880
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 140 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 28 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 960 MHz
Collector Capacitance (Cc): 45 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: CASE375A-01
MRF880 Transistor Equivalent Substitute - Cross-Reference Search
MRF880 Datasheet (PDF)
mrf880.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF880/DThe RF LineNPN SiliconMRF880RF Power TransistorDesigned for 26 V UHF largesignal, common emitter, classAB linearamplifier applications in industrial and commercial FM/AM equipment operatingin the range 800960 MHz. Specified 26 V, 900 MHz CharacteristicsOutput Power = 90 Watts90 W, 900 MHzGa
mrf880re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF880/DThe RF LineNPN SiliconMRF880RF Power TransistorDesigned for 26 V UHF largesignal, common emitter, classAB linearamplifier applications in industrial and commercial FM/AM equipment operatingin the range 800960 MHz. Specified 26 V, 900 MHz CharacteristicsOutput Power = 90 Watts90 W, 900 MHzGa
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
