All Transistors. MRF927T1 Datasheet

 

MRF927T1 Datasheet and Replacement


   Type Designator: MRF927T1
   SMD Transistor Code: F
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Maximum Emitter-Base Voltage |Veb|: 2.5 V
   Maximum Collector Current |Ic max|: 0.01 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 8000(typ) MHz
   Collector Capacitance (Cc): 0.33 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: SOT323
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MRF927T1 Datasheet (PDF)

 ..1. Size:165K  motorola
mrf927t1 mrf927t3.pdf pdf_icon

MRF927T1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF927T1/DThe RF Small Signal LineMRF927T1NPN Silicon Low Voltage,MRF927T3Low Current, Low Noise,High-Frequency TransistorsIC = 10 mADesigned for use in low voltage, low current applications at frequencies toLOW NOISE2.0 GHz. Specifically aimed at portable communication devices such asHIGH FREQUENCYpagers an

 ..2. Size:225K  motorola
mrf927t1.pdf pdf_icon

MRF927T1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF927T1/DThe RF Small Signal LineMRF927T1NPN Silicon Low Voltage,Low Current, Low Noise,High-Frequency TransistorsIC = 10 mADesigned for use in low voltage, low current applications at frequencies toLOW NOISE2.0 GHz. Specifically aimed at portable communication devices such asHIGH FREQUENCYpagers and handh

 0.1. Size:165K  motorola
mrf927t1rev1.pdf pdf_icon

MRF927T1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF927T1/DThe RF Small Signal LineMRF927T1NPN Silicon Low Voltage,MRF927T3Low Current, Low Noise,High-Frequency TransistorsIC = 10 mADesigned for use in low voltage, low current applications at frequencies toLOW NOISE2.0 GHz. Specifically aimed at portable communication devices such asHIGH FREQUENCYpagers an

 9.1. Size:295K  freescale
mrf9210.pdf pdf_icon

MRF927T1

Document Number: MRF9210Freescale SemiconductorRev. 6, 9/2008Technical DataRF Power Field Effect TransistorN-Channel Enhancement-Mode Lateral MOSFETDesigned for broadband commercial and industrial applications with freMRF9210R3quencies from 865 to 895 MHz. The high gain and broadband performance ofthis device make it ideal for large- signal, common source amplifier applicat

Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , D667 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .

History: KT8107D2 | 2SC906 | RCS617 | UN9217R | 2N1056 | 2SC999A | ECG2306

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