MRF927T1 Specs and Replacement

Type Designator: MRF927T1

SMD Transistor Code: F

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Maximum Emitter-Base Voltage |Veb|: 2.5 V

Maximum Collector Current |Ic max|: 0.01 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 8000 typ MHz

Collector Capacitance (Cc): 0.33 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: SOT323

 MRF927T1 Substitution

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MRF927T1 datasheet

 ..1. Size:165K  motorola

mrf927t1 mrf927t3.pdf pdf_icon

MRF927T1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF927T1/D The RF Small Signal Line MRF927T1 NPN Silicon Low Voltage, MRF927T3 Low Current, Low Noise, High-Frequency Transistors IC = 10 mA Designed for use in low voltage, low current applications at frequencies to LOW NOISE 2.0 GHz. Specifically aimed at portable communication devices such as HIGH FREQUENCY pagers an... See More ⇒

 ..2. Size:225K  motorola

mrf927t1.pdf pdf_icon

MRF927T1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF927T1/D The RF Small Signal Line MRF927T1 NPN Silicon Low Voltage, Low Current, Low Noise, High-Frequency Transistors IC = 10 mA Designed for use in low voltage, low current applications at frequencies to LOW NOISE 2.0 GHz. Specifically aimed at portable communication devices such as HIGH FREQUENCY pagers and hand h... See More ⇒

 0.1. Size:165K  motorola

mrf927t1rev1.pdf pdf_icon

MRF927T1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF927T1/D The RF Small Signal Line MRF927T1 NPN Silicon Low Voltage, MRF927T3 Low Current, Low Noise, High-Frequency Transistors IC = 10 mA Designed for use in low voltage, low current applications at frequencies to LOW NOISE 2.0 GHz. Specifically aimed at portable communication devices such as HIGH FREQUENCY pagers an... See More ⇒

 9.1. Size:295K  freescale

mrf9210.pdf pdf_icon

MRF927T1

Document Number MRF9210 Freescale Semiconductor Rev. 6, 9/2008 Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with fre MRF9210R3 quencies from 865 to 895 MHz. The high gain and broadband performance of this device make it ideal for large- signal, common source amplifier applicat... See More ⇒

Detailed specifications: MRF862, MRF880, MRF890, MRF892, MRF896, MRF898, MRF911, MRF917T1, 2N2222A, MRF927T3, MRF949T1, MRF959T1, NT407F, 2SA812-M4, 2SA812-M5, 2SA812-M6, 2SA812-M7

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