MRF927T1 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MRF927T1

Código: F

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.1 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 10 V

Tensión emisor-base (Veb): 2.5 V

Corriente del colector DC máxima (Ic): 0.01 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 8000 typ MHz

Capacitancia de salida (Cc): 0.33 pF

Ganancia de corriente contínua (hFE): 50

Encapsulados: SOT323

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MRF927T1 datasheet

 ..1. Size:165K  motorola
 mrf927t1 mrf927t3.pdf pdf_icon

MRF927T1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF927T1/D The RF Small Signal Line MRF927T1 NPN Silicon Low Voltage, MRF927T3 Low Current, Low Noise, High-Frequency Transistors IC = 10 mA Designed for use in low voltage, low current applications at frequencies to LOW NOISE 2.0 GHz. Specifically aimed at portable communication devices such as HIGH FREQUENCY pagers an

 ..2. Size:225K  motorola
 mrf927t1.pdf pdf_icon

MRF927T1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF927T1/D The RF Small Signal Line MRF927T1 NPN Silicon Low Voltage, Low Current, Low Noise, High-Frequency Transistors IC = 10 mA Designed for use in low voltage, low current applications at frequencies to LOW NOISE 2.0 GHz. Specifically aimed at portable communication devices such as HIGH FREQUENCY pagers and hand h

 0.1. Size:165K  motorola
 mrf927t1rev1.pdf pdf_icon

MRF927T1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF927T1/D The RF Small Signal Line MRF927T1 NPN Silicon Low Voltage, MRF927T3 Low Current, Low Noise, High-Frequency Transistors IC = 10 mA Designed for use in low voltage, low current applications at frequencies to LOW NOISE 2.0 GHz. Specifically aimed at portable communication devices such as HIGH FREQUENCY pagers an

 9.1. Size:295K  freescale
 mrf9210.pdf pdf_icon

MRF927T1

Document Number MRF9210 Freescale Semiconductor Rev. 6, 9/2008 Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with fre MRF9210R3 quencies from 865 to 895 MHz. The high gain and broadband performance of this device make it ideal for large- signal, common source amplifier applicat

MOSTRAR MÁS

Otros transistores... MRF862, MRF880, MRF890, MRF892, MRF896, MRF898, MRF911, MRF917T1, 2N2222A, MRF927T3, MRF949T1, MRF959T1, NT407F, 2SA812-M4, 2SA812-M5, 2SA812-M6, 2SA812-M7