MRF917T1 Todos los transistores

 ..1. Size:252K  motorola
 mrf917t1.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA from RF Marketing The RF Small Signal Line MRF917T1 NPN Silicon High-Frequency Transistors Designed for low noise, wide dynamic range front end amplifiers, at LOW NOISE frequencies to 1.5 GHz. Specifically aimed at portable communication devices HIGH FREQUENCY such as pagers and hand held phones. TRANSISTOR Small, Sur

 0.1. Size:252K  motorola
 mrf917t1rev0mds.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA from RF Marketing The RF Small Signal Line MRF917T1 NPN Silicon High-Frequency Transistors Designed for low noise, wide dynamic range front end amplifiers, at LOW NOISE frequencies to 1.5 GHz. Specifically aimed at portable communication devices HIGH FREQUENCY such as pagers and hand held phones. TRANSISTOR Small, Sur

 9.1. Size:78K  motorola
 mrf911.pdf

 9.2. Size:309K  freescale
 mrf9180.pdf

Document Number MRF9180 Freescale Semiconductor Rev. 10, 5/2006 Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF9180R6 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of this device make it ideal for large- signal, common- source amplifier applicati

 9.3. Size:385K  freescale
 mrf9135l.pdf

Document Number MRF9135L Freescale Semiconductor Rev. 8, 5/2006 Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with MRF9135LR3 frequencies from 865 to 895 MHz. The high gain and broadband performance MRF9135LSR3 of these devices make them ideal for large-signal, common-source am