MRF917T1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF917T1
Código: K
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.222 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 12 V
Tensión emisor-base (Veb): 2 V
Corriente del colector DC máxima (Ic): 0.06 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 6000(typ) MHz
Capacitancia de salida (Cc): 0.54 pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: SOT323
Búsqueda de reemplazo de transistor bipolar MRF917T1
MRF917T1 Datasheet (PDF)
mrf917t1.pdf
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mrf917t1rev0mds.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAfrom RF MarketingThe RF Small Signal LineMRF917T1NPN SiliconHigh-Frequency TransistorsDesigned for low noise, wide dynamic range front end amplifiers, atLOW NOISEfrequencies to 1.5 GHz. Specifically aimed at portable communication devicesHIGH FREQUENCYsuch as pagers and handheld phones.TRANSISTOR Small, Sur
mrf9180.pdf
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mrf9135l.pdf
Document Number: MRF9135LFreescale SemiconductorRev. 8, 5/2006Technical DataRF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsDesigned for broadband commercial and industrial applications withMRF9135LR3frequencies from 865 to 895 MHz. The high gain and broadband performanceMRF9135LSR3of these devices make them ideal for large-signal, common-source am
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