MRF917T1 Specs and Replacement
Type Designator: MRF917T1
SMD Transistor Code: K
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.222 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.06 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 6000 typ MHz
Collector Capacitance (Cc): 0.54 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: SOT323
MRF917T1 Substitution
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MRF917T1 datasheet
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA from RF Marketing The RF Small Signal Line MRF917T1 NPN Silicon High-Frequency Transistors Designed for low noise, wide dynamic range front end amplifiers, at LOW NOISE frequencies to 1.5 GHz. Specifically aimed at portable communication devices HIGH FREQUENCY such as pagers and hand held phones. TRANSISTOR Small, Sur... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA from RF Marketing The RF Small Signal Line MRF917T1 NPN Silicon High-Frequency Transistors Designed for low noise, wide dynamic range front end amplifiers, at LOW NOISE frequencies to 1.5 GHz. Specifically aimed at portable communication devices HIGH FREQUENCY such as pagers and hand held phones. TRANSISTOR Small, Sur... See More ⇒
Document Number MRF9180 Freescale Semiconductor Rev. 10, 5/2006 Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF9180R6 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of this device make it ideal for large- signal, common- source amplifier applicati... See More ⇒
Detailed specifications: MRF861, MRF862, MRF880, MRF890, MRF892, MRF896, MRF898, MRF911, TIP31C, MRF927T1, MRF927T3, MRF949T1, MRF959T1, NT407F, 2SA812-M4, 2SA812-M5, 2SA812-M6
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