MRF959T1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF959T1
Código: V1
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 10 V
Tensión emisor-base (Veb): 1.5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 9000(typ) MHz
Capacitancia de salida (Cc): 0.63 pF
Ganancia de corriente contínua (hfe): 75
Paquete / Cubierta: SC90
Búsqueda de reemplazo de transistor bipolar MRF959T1
MRF959T1 Datasheet (PDF)
mrf959t1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF959T1/DThe RF LineMRF959T1NPN SiliconLow Noise TransistorsMotorolas MRF959 is a high performance silicon NPN transistor designed foruse in high gain, low noise smallsignal amplifiers. The MRF959 is well suited ICmax = 100 mAfor low voltage applications. This device features a 9 GHz DC current LOW NOISEgain
mrf959t1rev0.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF959T1/DThe RF LineMRF959T1NPN SiliconLow Noise TransistorsMotorolas MRF959 is a high performance silicon NPN transistor designed foruse in high gain, low noise smallsignal amplifiers. The MRF959 is well suited ICmax = 100 mAfor low voltage applications. This device features a 9 GHz DC current LOW NOISEgain
mmbr951 mrf951 mrf957 mrf9511.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR951ALT1/DThe RF LineMMBR951NPN SiliconMRF951Low Noise, High-FrequencyMRF957TransistorsMRF9511Designed for use in high gain, low noise smallsignal amplifiers. This seriesSERIESfeatures excellent broadband linearity and is offered in a variety of packages. Fully Implanted Base and Emitter Structure
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
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