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MRF959T1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MRF959T1
   Código: V1
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 10 V
   Tensión emisor-base (Veb): 1.5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 9000(typ) MHz
   Capacitancia de salida (Cc): 0.63 pF
   Ganancia de corriente contínua (hfe): 75
   Paquete / Cubierta: SC90
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MRF959T1 Datasheet (PDF)

 ..1. Size:171K  motorola
 mrf959t1.pdf pdf_icon

MRF959T1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF959T1/DThe RF LineMRF959T1NPN SiliconLow Noise TransistorsMotorolas MRF959 is a high performance silicon NPN transistor designed foruse in high gain, low noise smallsignal amplifiers. The MRF959 is well suited ICmax = 100 mAfor low voltage applications. This device features a 9 GHz DC current LOW NOISEgain

 0.1. Size:171K  motorola
 mrf959t1rev0.pdf pdf_icon

MRF959T1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF959T1/DThe RF LineMRF959T1NPN SiliconLow Noise TransistorsMotorolas MRF959 is a high performance silicon NPN transistor designed foruse in high gain, low noise smallsignal amplifiers. The MRF959 is well suited ICmax = 100 mAfor low voltage applications. This device features a 9 GHz DC current LOW NOISEgain

 9.1. Size:330K  motorola
 mmbr951 mrf951 mrf957 mrf9511.pdf pdf_icon

MRF959T1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR951ALT1/DThe RF LineMMBR951NPN SiliconMRF951Low Noise, High-FrequencyMRF957TransistorsMRF9511Designed for use in high gain, low noise smallsignal amplifiers. This seriesSERIESfeatures excellent broadband linearity and is offered in a variety of packages. Fully Implanted Base and Emitter Structure

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History: ZTX302M | NSVF4009SG4

 

 
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