MRF959T1 Specs and Replacement

Type Designator: MRF959T1

SMD Transistor Code: V1

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Maximum Emitter-Base Voltage |Veb|: 1.5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 9000 typ MHz

Collector Capacitance (Cc): 0.63 pF

Forward Current Transfer Ratio (hFE), MIN: 75

Noise Figure, dB: -

Package: SC90

 MRF959T1 Substitution

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MRF959T1 datasheet

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MRF959T1

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 mmbr951 mrf951 mrf957 mrf9511.pdf pdf_icon

MRF959T1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR951ALT1/D The RF Line MMBR951 NPN Silicon MRF951 Low Noise, High-Frequency MRF957 Transistors MRF9511 Designed for use in high gain, low noise small signal amplifiers. This series SERIES features excellent broadband linearity and is offered in a variety of packages. Fully Implanted Base and Emitter Structure ... See More ⇒

Detailed specifications: MRF892, MRF896, MRF898, MRF911, MRF917T1, MRF927T1, MRF927T3, MRF949T1, 2SD1047, NT407F, 2SA812-M4, 2SA812-M5, 2SA812-M6, 2SA812-M7, BC807-16Q, BC807-25Q, BC807-40Q

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