All Transistors. MRF927T3 Datasheet

 

MRF927T3 Datasheet and Replacement


   Type Designator: MRF927T3
   SMD Transistor Code: F
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Maximum Emitter-Base Voltage |Veb|: 2.5 V
   Maximum Collector Current |Ic max|: 0.01 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 8000(typ) MHz
   Collector Capacitance (Cc): 0.33 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: SOT323
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MRF927T3 Datasheet (PDF)

 ..1. Size:165K  motorola
 mrf927t1 mrf927t3.pdf pdf_icon

MRF927T3

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF927T1/DThe RF Small Signal LineMRF927T1NPN Silicon Low Voltage,MRF927T3Low Current, Low Noise,High-Frequency TransistorsIC = 10 mADesigned for use in low voltage, low current applications at frequencies toLOW NOISE2.0 GHz. Specifically aimed at portable communication devices such asHIGH FREQUENCYpagers an

 7.1. Size:165K  motorola
 mrf927t1rev1.pdf pdf_icon

MRF927T3

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF927T1/DThe RF Small Signal LineMRF927T1NPN Silicon Low Voltage,MRF927T3Low Current, Low Noise,High-Frequency TransistorsIC = 10 mADesigned for use in low voltage, low current applications at frequencies toLOW NOISE2.0 GHz. Specifically aimed at portable communication devices such asHIGH FREQUENCYpagers an

 7.2. Size:225K  motorola
 mrf927t1.pdf pdf_icon

MRF927T3

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF927T1/DThe RF Small Signal LineMRF927T1NPN Silicon Low Voltage,Low Current, Low Noise,High-Frequency TransistorsIC = 10 mADesigned for use in low voltage, low current applications at frequencies toLOW NOISE2.0 GHz. Specifically aimed at portable communication devices such asHIGH FREQUENCYpagers and handh

 9.1. Size:295K  freescale
 mrf9210.pdf pdf_icon

MRF927T3

Document Number: MRF9210Freescale SemiconductorRev. 6, 9/2008Technical DataRF Power Field Effect TransistorN-Channel Enhancement-Mode Lateral MOSFETDesigned for broadband commercial and industrial applications with freMRF9210R3quencies from 865 to 895 MHz. The high gain and broadband performance ofthis device make it ideal for large- signal, common source amplifier applicat

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History: PT23T3904 | KSC5030O | 2N1021 | XA124 | HI10387 | D38H1 | 2SC547D

Keywords - MRF927T3 transistor datasheet

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