MMBT2222A-L Specs and Replacement

Type Designator: MMBT2222A-L

SMD Transistor Code: 1P

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 75 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 300 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT23

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MMBT2222A-L datasheet

 ..1. Size:930K  cn salltech

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MMBT2222A-L

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 ..2. Size:795K  cn shandong jingdao microelectronics

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MMBT2222A-L

Jingdao Microelectronics co.LTD MMBT2222A MMBT2222A SOT-23 NPN TRANSISTOR 3 FEATURES Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO 75 V 2.EMITTER Collector Emitte... See More ⇒

 ..3. Size:1943K  wpmtek

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MMBT2222A-L

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 4.1. Size:141K  comchip

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MMBT2222A-L

Small Signal Transistor MMBT2222A-G (NPN) RoHS Device Features SOT-23 -NPN silicon epitaxial planar transistor for switching and amplifier application. 0.118(3.00) 0.110(2.80) 3 Mechanical data 0.055(1.40) 0.047(1.20) -Case SOT-23, molded plastic. 1 2 0.079(2.00) 0.071(1.80) -Terminals solderable per MIL-STD-750, method 2026. 0.006(0.15) 0.003(0.08) -Approx. weight 0... See More ⇒

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Detailed specifications: 2SD1628-E, 2SD1628-F, 2SD1628-G, C945H, C945L, GT13003Y, L8550HQ, MMBT2222A-H, BD333, MMBT2907A-H, MMBT2907A-L, MMBT3904-H, MMBT3904J, MMBT3904-L, MMBT3906-H, MMBT3906-L, MMBT4401H

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