2SC4617Q Datasheet, Equivalent, Cross Reference Search

   Type Designator: 2SC4617Q
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 180(typ) MHz
   Collector Capacitance (Cc): 3.5(max) pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT523

2SC4617Q Transistor Equivalent Substitute - Cross-Reference Search

2SC4617Q Datasheet (PDF)

..1. Size:156K cn tak cheong
2sc4617q 2sc4617r 2sc4617s.pdf

TAK CHEONG SEMICONDUCTOR150mW SOT-523 SURFACE MOUNT Green Product Plastic Package NPN Silicon General Purpose Transistor 3 Absolute Maximum Ratings TA = 25C unless otherwise noted 2 Symbol Parameter Value UnitsPC Collector Power Dissipation 150 mW 1 TSTG Storage Temperature Range -55 to +150 C TJ Operating Junction Temperature +150 C SOT-523 VCBO Collecto

..2. Size:1751K cn twgmc
2sc4617q 2sc4617r 2sc4617s.pdf

2SC46172SC46172SC46172SC4617TRANSISTOR(NPN)2SC4617SOT523FEATURES Low Cob:Cob=2.0pF(Typ) Complement to 2SA1774 1. BASE2. EMITTER3. COLLECTORMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 150

0.1. Size:1098K lrc
l2sc4617qt1g.pdf

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique SiteL2SC4617QT1G Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Ordering informationS-L2SC4617QT1G SeriesDevice Marking ShippingL2SC4617QT1G BQ

0.2. Size:1098K lrc
l2sc4617qt1g l2sc4617qt3g l2sc4617rt1g l2sc4617rt3g l2sc4617st1g l2sc4617st3g.pdf