2SC4617R Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC4617R
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 180(typ) MHz
Collector Capacitance (Cc): 3.5(max) pF
Forward Current Transfer Ratio (hFE), MIN: 180
Noise Figure, dB: -
Package: SOT523
2SC4617R Transistor Equivalent Substitute - Cross-Reference Search
2SC4617R Datasheet (PDF)
2sc4617q 2sc4617r 2sc4617s.pdf
TAK CHEONG SEMICONDUCTOR150mW SOT-523 SURFACE MOUNT Green Product Plastic Package NPN Silicon General Purpose Transistor 3 Absolute Maximum Ratings TA = 25C unless otherwise noted 2 Symbol Parameter Value UnitsPC Collector Power Dissipation 150 mW 1 TSTG Storage Temperature Range -55 to +150 C TJ Operating Junction Temperature +150 C SOT-523 VCBO Collecto
2sc4617q 2sc4617r 2sc4617s.pdf
2SC46172SC46172SC46172SC4617TRANSISTOR(NPN)2SC4617SOT523FEATURES Low Cob:Cob=2.0pF(Typ) Complement to 2SA1774 1. BASE2. EMITTER3. COLLECTORMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 150
2sc4617rev0.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2SC4617/DPreliminary Information 2SC4617NPN Silicon General PurposeAmplifier TransistorNPN GENERALThis NPN transistor is designed for general purpose amplifier applications.PURPOSE AMPLIFIERThis device is housed in the SOT-416/SC90 package which is designed forTRANSISTORSlow power surface mount applications, wh
l2sc4617rt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon We declare that the material of product compliance with RoHS requirements.L2SC4617QT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L2SC4617QT1GORDERING INFORMATION SeriesDevice Marking ShippingL2SC4617QT1G
l2sc4617qt1g l2sc4617qt3g l2sc4617rt1g l2sc4617rt3g l2sc4617st1g l2sc4617st3g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique SiteL2SC4617QT1G Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Ordering informationS-L2SC4617QT1G SeriesDevice Marking ShippingL2SC4617QT1G BQ
l2sc4617qt1g l2sc4617rt1g l2sc4617st1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique SiteL2SC4617QT1G Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Ordering informationS-L2SC4617QT1G SeriesDevice Marking ShippingL2SC4617QT1G BQ
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
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BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS