Биполярный транзистор 2SC4617R - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC4617R
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 0.15 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 180(typ) MHz
Ёмкость коллекторного перехода (Cc): 3.5(max) pf
Статический коэффициент передачи тока (hfe): 180
Корпус транзистора: SOT523
2SC4617R Datasheet (PDF)
2sc4617q 2sc4617r 2sc4617s.pdf
TAK CHEONG SEMICONDUCTOR150mW SOT-523 SURFACE MOUNT Green Product Plastic Package NPN Silicon General Purpose Transistor 3 Absolute Maximum Ratings TA = 25C unless otherwise noted 2 Symbol Parameter Value UnitsPC Collector Power Dissipation 150 mW 1 TSTG Storage Temperature Range -55 to +150 C TJ Operating Junction Temperature +150 C SOT-523 VCBO Collecto
2sc4617q 2sc4617r 2sc4617s.pdf
2SC46172SC46172SC46172SC4617TRANSISTOR(NPN)2SC4617SOT523FEATURES Low Cob:Cob=2.0pF(Typ) Complement to 2SA1774 1. BASE2. EMITTER3. COLLECTORMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 150
2sc4617rev0.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2SC4617/DPreliminary Information 2SC4617NPN Silicon General PurposeAmplifier TransistorNPN GENERALThis NPN transistor is designed for general purpose amplifier applications.PURPOSE AMPLIFIERThis device is housed in the SOT-416/SC90 package which is designed forTRANSISTORSlow power surface mount applications, wh
l2sc4617rt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon We declare that the material of product compliance with RoHS requirements.L2SC4617QT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L2SC4617QT1GORDERING INFORMATION SeriesDevice Marking ShippingL2SC4617QT1G
l2sc4617qt1g l2sc4617qt3g l2sc4617rt1g l2sc4617rt3g l2sc4617st1g l2sc4617st3g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique SiteL2SC4617QT1G Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Ordering informationS-L2SC4617QT1G SeriesDevice Marking ShippingL2SC4617QT1G BQ
l2sc4617qt1g l2sc4617rt1g l2sc4617st1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique SiteL2SC4617QT1G Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Ordering informationS-L2SC4617QT1G SeriesDevice Marking ShippingL2SC4617QT1G BQ
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050