All Transistors. SEBC847BU Datasheet

 

SEBC847BU Datasheet, Equivalent, Cross Reference Search


   Type Designator: SEBC847BU
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200(typ) MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SC70

 SEBC847BU Transistor Equivalent Substitute - Cross-Reference Search

   

SEBC847BU Datasheet (PDF)

 ..1. Size:200K  cn sino-ic
sebc847bu sebc847cu.pdf

SEBC847BU
SEBC847BU

SHANGHAI June 2009 MICROELECTRONICS CO., LTD. SEBC847BU/SEBC847CU NPN General Purpose Transistor Revision:A External dimensions (Units : mm) Features BVCEO

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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