SEBC847BU Specs and Replacement
Type Designator: SEBC847BU
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 typ MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: SC70
SEBC847BU Substitution
- BJT ⓘ Cross-Reference Search
SEBC847BU datasheet
SHANGHAI June 2009 MICROELECTRONICS CO., LTD. SEBC847BU/SEBC847CU NPN General Purpose Transistor Revision A External dimensions (Units mm) Features BVCEO ... See More ⇒
Detailed specifications: MMBTH10A, MMBTH10B, MMBTH10C, PXT8050-D1, PXT8050-D2, PXT8550D1, PXT8550D2, S8550E, S9013, SEBC847CU, SEBT3904U, SEBT3906U, SEBT8050-C, SEBT8050-D, SEBT818BA, SEBT9012, SEBT9013
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