SEBT8050-C pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

SEBT8050-C Specs and Replacement

Type Designator: SEBT8050-C

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 35 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 120 typ MHz

Collector Capacitance (Cc): 13 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT23 TO92

SEBT8050-C Substitution

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SEBT8050-C datasheet

..1. Size:509K cn sino-ic

sebt8050-c sebt8050-d.pdf pdf_icon

SHANGHAI June 2006 MICROELECTRONICS CO., LTD. SEB T8050 EPITAXIAL PLANAR PNP TRANSISTOR Features Complementary to SEBT8050 Applications HIGH CURRENT APPLICATION Construction Maximum Ratings (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 35 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Collector Current IC mA ... See More ⇒

9.1. Size:225K cn sino-ic

sebt818ba.pdf pdf_icon

SHANGHAI June 2008 MICROELECTRONICS CO., LTD. Revision A SEBT818BA HIGH GAIN LOW VOLTAGE PNP POWER TRANSISTOR DESCRIPTION Features The device is manufactured in low voltage PNP VERY LOW COLLECTOR EMITTER Planar Technology by using a "Base Island" SATURATION VOLTAGE layout. DC CURRENT GAIN>100(hPE) The resulting Transistor shows exceptional high 3 A CONTINUOUS COLLECTOR ... See More ⇒

Detailed specifications: PXT8050-D2, PXT8550D1, PXT8550D2, S8550E, SEBC847BU, SEBC847CU, SEBT3904U, SEBT3906U, D209L, SEBT8050-D, SEBT818BA, SEBT9012, SEBT9013, SEBT9014, SEBT9015, SEBT9016, SEBT9018