All Transistors. SEBT8050-D Datasheet

 

SEBT8050-D Datasheet and Replacement


   Type Designator: SEBT8050-D
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 120(typ) MHz
   Collector Capacitance (Cc): 13 pF
   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -
   Package: SOT23 TO92
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SEBT8050-D Datasheet (PDF)

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 sebt8050-c sebt8050-d.pdf pdf_icon

SEBT8050-D

SHANGHAI June 2006 MICROELECTRONICS CO., LTD. SEB T8050 EPITAXIAL PLANAR PNP TRANSISTOR Features Complementary to SEBT8050Applications HIGH CURRENT APPLICATION Construction Maximum Ratings (Ta=25) CHARACTERISTIC SYMBOL RATING UNITCollector-Base Voltage VCBO 35 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Collector Current IC mA

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 sebt818ba.pdf pdf_icon

SEBT8050-D

SHANGHAI June 2008 MICROELECTRONICS CO., LTD. Revision:A SEBT818BA HIGH GAIN LOW VOLTAGE PNP POWER TRANSISTOR DESCRIPTION Features The device is manufactured in low voltage PNP VERY LOW COLLECTOR EMITTER Planar Technology by using a "Base Island" SATURATION VOLTAGE layout. DC CURRENT GAIN>100(hPE) The resulting Transistor shows exceptional high 3 A CONTINUOUS COLLECTOR

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: HSE420 | MM4019 | BTB1424AT3 | 2N2473 | 2N3183 | 2SB1144S | BF420A

Keywords - SEBT8050-D transistor datasheet

 SEBT8050-D cross reference
 SEBT8050-D equivalent finder
 SEBT8050-D lookup
 SEBT8050-D substitution
 SEBT8050-D replacement

 

 
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