S9012J Datasheet, Equivalent, Cross Reference Search

RUMW UMW S9012SOT-23 Plastic-Encapsulate TransistorsS9012 TRANSISTOR (PNP) SOT-23 FEATURES High Collector Current Complementary To S90131. BASE Excellent hFE Linearity 2. EMITTER 3. COLLECTOR MARKING: 2T1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO

SS90121W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC= -500mA) Complementary to SS9013 Excellent hFE linearity.TO-9211. Emitter 2. Base 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsV

SS9012 PNP EPITAXIAL SILICON TRANSISTOR1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASSTO-92B PUSH-PULL OPERATION. High total power dissipation. (PT=625mW) High Collector Current. (IC= -500mA) Complementary to SS9013 Excelent hFE linearity.ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO -40VCollector-Emitter

MCCMicro Commercial Components MMS9012-LTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311MMS9012-HPhone: (818) 701-4933Fax: (818) 701-4939Features SOT-23 Plastic-Encapsulate TransistorsPNP Silicon Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.5APlastic-Encapsulate Collector-base Voltage 40V Operating

MCCMicro Commercial Components MMS9012-LTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311MMS9012-HPhone: (818) 701-4933Fax: (818) 701-4939Features SOT-23 Plastic-Encapsulate TransistorsPNP Silicon Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.5APlastic-Encapsulate Collector-base Voltage 40V Operating

S9012-GMCCMicro Commercial ComponentsTMS9012-H20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311S9012-IPhone: (818) 701-4933Fax: (818) 701-4939Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.PNP Silicon Collector-current 0.5A Collector-base Voltage 40VTransistors Operating a

STS9012SemiconductorSemiconductorPNP Silicon TransistorDescription General purpose application. Switching application.Features Excellent hFE linearity. Complementary pair with STS9013Ordering InformationType NO. Marking Package Code STS9012 STS9012 TO-92Outline Dimensions unit : mm3.450.14.50.12.250.10.40.022.060.11.27 Typ.2.54

S9012PNP SiliconElektronische Bauelemente General Purpose TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeSOT-23FEATURESCollectorDim Min Max33A 2.800 3.040B 1.200 1.400Power dissipation 11C 0.890 1.1102BasePCM : 0.3 WD 0.370 0.500Collector CurrentG 1.780 2.0402ICM : - 0.5 A AEmitterH 0.013 0.100LCollector-base v

S9012TPNP Epitaxial Silicon TransistorRoHS Compliant ProductTO-92A suffix of "-C" specifies halogen & lead-free4.550.2 3.50.2FEATURE Power dissipation PCM : 0.625 W Tamb=25 Collector current ICM: -0.5 A 0.43+0.080.0746+0.10. 0.1 Collector-base voltage V(BR)CBO : -40 V(1.27 Typ.)1: Emitter Operating and storage junction temperature range +0.21.

TRANSISTOR (PNP) 1. EMITTER 2. BASE 3. COLLECTOR Equivalent Circuit XXX

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-323 Plastic-Encapsulate Transistors JC TSOT-323 S9012W TRANSISTOR (PNP) FEATURES 1. BASE 2. EMITTER Complementary to S9013W 3. COLLECTOR Excellent hFE linearity MARKING: 2T1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter

S901 2SOT-23 TRANSISTOR(PNP)FEATURES 1. BASE Complementary to S9013 2. EMITTER Excellent hFE linearity 3. COLLECTOR MARKING: 2T1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO -40 VCollector-Base Voltage VCEO -25 VCollector-Emitter Voltage VEBO Emitter-Base Voltage -5 VIC Collector Current -Continuous -500 mA PC Collect

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM9012FEATURESFEATURES FEATURESExcellent HFE Linearity HFE hFE(2)=25(Min.) at VCE=6V,Ic=400mA.Complementary to GM9013 GM9013 MAXIMUM RATINGS (Ta=25 )MAXIMUM RATIN

S9012 PNP Silicon Epitaxial Planar TransistorFEATURES A SOT-23 High Collector Current.(IC= -500mA Dim Min MaxA 2.70 3.10E Complementary To S9013.B 1.10 1.50K BC 1.0 Typical Excellent HFE Linearity. D 0.4 TypicalE 0.35 0.48JDG 1.80 2.00APPLICATIONS GH 0.02 0.1J 0.1 Typical High Collector Current. HK 2.20 2.60CAll Dimensions in mm MAXIMUM

S9012 SOT-23 Transistor(PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9013 Excellent hFE linearity MARKING: 2T1 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO -40 VCollector-Base Voltage VCEO -25 VCollector-Emitter Voltage VEBO Emitter-Base Voltage -5 VIC Coll

S9012(PNP)TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Complementary to S9013 Excellent hFE linearity MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO -40 VCollector-Base Voltage VCEO -25 VCollector-Emitter Voltage VEBO Emitter-Base Voltage -5 VDimensions in inches and (millimeters)IC Collector

S9012PNP General Purpose TransistorsTO-92P b Lead(Pb)-Free1. EMITTER122. BASE33. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating SymbolValue UnitCollector-Emitter Voltage VCEO -25 VdcCollector-Base Voltage VCBO -40VdcEmitter-Base Voltage VEBO-5 VdcCollector Current IC-500 mAdcPCMTotal Device Dissipation T =25 C 0.625WAJunction Temperature T 15

S9012LT1PNP General Purpose Transistors3P b Lead(Pb)-Free 12SOT-23ValueVCEO -20-40-5-5003002.4417S9012PLT1=12P S9012QLT1=12Q S9012RLT1=12R S9012SLT1=12S-0.1-20-100 -40-5.0-100u-0.15-35-0.15 u-4.0WEITRON1/2 28-Apr-2011http://www.weitron.com.twS9012LT1ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)Characterist

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S9012 TRANSISTOR (PNP) TO-92 1. EMITTER FEATURE Power dissipation 2. BASE PCM: 0.625 W (Tamb=25) 3. COLLECTOR Collector current ICM: -0.5 A 1 2 3 Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range Tj, Tstg: -55 to +150

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 1. BASE S9012LT1 TRANSISTOR (PNP) 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 2. 4 PCM: 0.3 W (Tamb=25) 1. 3 Collector current ICM: -0.5 A Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range Unit: mm TJ, Tst

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors S9012 TRANSISTOR (PNP) FEATURES Complimentary to S9013 Collector current:Ic=0.5A MARKING:2T1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units

*********************************************************************************** S 9012 PNP EPITAXIAL SILICON TRANSISTOR: Ta=25) - VCBO -40 V - VCEO -20 V - VEBO -5 V

Bruckewell Technology Corp., Ltd. PNP EPITAXIAL SILICON TRANSISTOR S9012LT FEATURES Excellent HFE Linearity HFE hFE(2)=25(Min.) at VCE=6V ,Ic=400m High Total Power Dissipation: Pc=225mW MECHANICAL DATA * Case: SOT-23 Molded plastic * Epoxy: UL94V-O rate flame retardant SOT-23 Dimensions in millimeter MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Maximum Ratings (T

Product specification PNP Silicon Epitaxial Planar Transistor S9012 FEATURES Pb High Collector Current.(I = -500mA CLead-free Complementary To S9013. Excellent H Linearity. FEAPPLICATIONS High Collector Current. SOT-23 ORDERING INFORMATION Type No. Marking Package Code S9012 2T1 SOT-23 : none is for Lead Free package; G is fo

S9012 PNP Silicon Epitaxial Planar TransistorFEATURES High Collector Current.(IC= -500mA Complementary To S9013. Excellent HFE Linearity. APPLICATIONS High Collector Current. SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UnitsCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -25 VEmitter-Base Voltage VEB

S9012 PNP SMD TransistorsFEATURES SOT23 High Collector Current Complementary To S9013 Excellent hFE Linearity MARKING: 2T1 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -500

S9012Transistors SOT-23 Plastic-Encapsulate Transistors(PNP) RHOS FeaturesSOT-23 As complementary type the NPN transistor S9013 is recommended Epitaxial planar die construction Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V1. BASEVCEO Collector-Emitter Voltage -25

S9012TRANSISTOR (PNP)FEATURES SOT-23 High Collector Current Complementary To S9013 Excellent hFE Linearity32MARKING: 2T1 11. BASE2. EMITTER3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA

PNP SMD TransistorsFormosa MSS9012 SOT23 FEATURES High Collector Current Complementary To S9013 Excellent hFE Linearity 1. BASE 2. EMITTER MARKING: 2T1 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector

S9 012SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP )Features SOT- 23High Collector Current. Complementary to S9013. Excellent hFE Linearity. Marking: 2T1Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V V Collector-Emitter Voltage -25 V CEOCV Emitter-Base Voltage -5 V EBOI Collector Current -500 mA CP Collector Po

S9012PNP Epitaxial Silicon TransistorTO-924.550.2 3.50.2FEATURE Power dissipation PCM : 0.625 W Tamb=25 Collector current ICM: -0.5 A 0.43+0.080.0746+0.10. 0.1 Collector-base voltage V(BR)CBO : -40 V(1.27 Typ.)1: Emitter Operating and storage junction temperature range +0.21.250.22: Base1 2 3Tj, Tstg: -55 to +1503: Collector2.540.1

S9012 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. FEATURES High Collector Current. Complementary to S9013. Excellent hFE Linearity. SOT-23 Plastic PackageMARKING: 2T1 OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO -40 VCollector Emitter Voltage VCEO -25 VEmitter Base Voltage VE

www.msksemi.comS9012-MSSemiconductor CompianceSemiconductor CompianceTRANSISTOR (PNP)FEATURES High Collector Current Complementary To 1. BASE S9013-MS 2. EMITTERSOT23 MARKING: 2T1 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base

Jingdao Microelectronics co.LTDS9012General Purpose TransistorPNP SiliconFEATURES High Collector Current Complementary To S9013 Excellent hFE LinearitySOT-233COLLECTOOR31DEVICE MARKINGBASES9012 = 2T112EMITTER2MAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage VCEO -25 Vdc

S9012SOT-23 Plastic-Encapsulate Transistors S9012 TRANSISTOR (PNP) FEATURES Complimentary to S9013 Collector current:Ic=0.5A MARKING:2T1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - -40 V VCEO Collector-Emitter Voltage

S9012S9012S9012S9012S9 0 12 TRANSISTOR(PNP)FEATURES High Collector Current SOT-23 Complementary To S9013 Excellent hFE Linearity 1BASE 2EMITTER MARKING: 2T1 3COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO -40 VCollector-Base VoltageVCEO -25 VCollector-Emitter VoltageVEBO Emitter-Base Voltage -5

S9012 S9012 PNP Transistors General description SOT-23 Plastic-Encapsulate Transistors FEATURES Complementary to S9013 Power Dissipation of 300mW High Stability and High Reliability MECHANICAL DATA SOT-23 Small Outline Plastic Package Epoxy UL: 94V-0 Mounting Position: Any Marking: 2T1 Maximum Ratings & Thermal Characteristics TA = 25C un

S9012 TRANSISTOR (PNP)FEATURES SOT-23 Complementary to S9013 Excellent hFE linearity 1BASE 2EMITTER 3COLLECTOR MARKING: 2T1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Col

S9012W/SOT323 TRANSISTOR (PNP) FEATURESComplementary to S9013TExcellent h linearityFEMARKING: 2T1MAXIMUM RATINGS (T =25 unless otherwise noted)ASymbol Parameter Value UnitsV -40 VCBO Collector-Base VoltageVCEOCollector-Emitter Voltage -25 VVEBO Emitter-Base Voltage -5 VI Collector Current -Continuous -500 mACP Collector Power Dissipation 300 mWCT Junc

S9012TTRANSISTOR PNPFEATURES SOT-523 Complementary to S9013TExcellent hFE linearity 1. BASE 2. EMITTER MARKING: 2T1 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC C

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDS9012 MAXIMUM RATINGS (Ta=25)Characteristic Symbol Rating Unit Collector-Base voltageVCBO -40 Vdc--Collector-Emitter VoltageVCEO -30 Vdc-Emitter-Base voltageVEBO -5.0 Vdc-

S9012PNP GENERAL PURPOSE SWITCHING TRANSISTOR25Volts POWER 300mWattsVOLTAGEFEATURESPNP epitaxial silicon, planar design. Collector-emitter voltage VCE=-25V.Collector current IC=-0.5A.ansition frequency fT>150MHz @ IC=-Tr20mAdc, VCE=-6Vdc, f=30MHz.In compliance with ER RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic3Terminals: Sol

S9012BIPOLAR TRANSISTOR (PNP)FEATURES Complementary to S9013 Excellent h LinearityFE High Collector Current Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol

Features A SOT-23 CDim Min MaxA0.37 0.51B CB1.20 1.40TOP VIEWB ECD 2.30 2.50EGD0.89 1.03E0.45 0.60HG1.78 2.05KH2.80 3.00JJ0.013 0.10Maximum Ratings @

isc Silicon PNP Power Transistor S9012DESCRIPTIONExcellent hFE linearityComplement to NPN Type S9013Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -40 VCBOV Collector-Emitter Voltage -25 VCEOV Emitt