2SD661A Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD661A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 55 V
Maximum Collector-Emitter Voltage |Vce|: 55 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200(typ) MHz
Collector Capacitance (Cc): 2.2 pF
Forward Current Transfer Ratio (hFE), MIN: 210
Package: SC71
2SD661A Transistor Equivalent Substitute - Cross-Reference Search
2SD661A Datasheet (PDF)
2sd661a.pdf
Transistor2SD661, 2SD661ASilicon NPN epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0R0.9FeaturesLow noise voltage NV.High foward current transfer ratio hFE.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1 0.45 0.05Abso
2sd661.pdf
Transistor2SD661, 2SD661ASilicon NPN epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0R0.9FeaturesLow noise voltage NV.High foward current transfer ratio hFE.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1 0.45 0.05Abso
2sd661 e.pdf
Transistor2SD661, 2SD661ASilicon NPN epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0R0.9FeaturesLow noise voltage NV.High foward current transfer ratio hFE.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1 0.45 0.05Abso
2sd662b.pdf
Transistor2SD662, 2SD662BSilicon NPN epitaxial planer typeFor high breakdown voltage general amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High collector to emitter voltage VCEO.High transition frequency fT.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85Absolute Maximum
2sd667l.pdf
MCCTM Micro Commercial Components20736 Marilla Street Chatsworth2SD667LMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Low Frequency Power Amplifier NPN Complementary Pair with 2SB647/A Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1Transistor Lead Free Finish/Rohs Compl
2sd667a-b-c-d 2sd667-b-c-d.pdf
2SD667(A)-BMCCMicro Commercial ComponentsTM2SD667(A)-C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SD667(A)-DPhone: (818) 701-4933Fax: (818) 701-4939Features Epoxy meets UL 94 V-0 flammability ratingNPN Silicon Moisture Sensitivity Level 1 Capable of 0.9Watts of Power Dissipation. Capable of 0.9Watts of Power Dissipation.Pla
2sd662 e.pdf
Transistor2SD662, 2SD662BSilicon NPN epitaxial planer typeFor high breakdown voltage general amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High collector to emitter voltage VCEO.High transition frequency fT.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85Absolute Maximum
2sd662.pdf
Transistor2SD662, 2SD662BSilicon NPN epitaxial planer typeFor high breakdown voltage general amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High collector to emitter voltage VCEO.High transition frequency fT.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85Absolute Maximum
2sd667.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SD667 NPN SILICON TRANSISTOR SILICON NPN EPITAXIAL DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier. FEATURES * Low frequency power amplifier ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD667L-x-AE3-R 2SD6
2sd669 2sd669a.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD669xL-x-AA3-R 2SD669xG-x-AA3-R SOT-223 B C E Tape Reel2SD669xL-x-AB3-R 2SD669xG-
2sd669.pdf
2SD669, 2SD669ASilicon NPN EpitaxialADE-208-899 (Z)1st. EditionSep. 2000ApplicationLow frequency power amplifier complementary pair with 2SB649/AOutlineTO-126 MOD1. Emitter2. Collector3. Base1232SD669, 2SD669AAbsolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SD669 2SD669A UnitCollector to base voltage VCBO 180 180 VCollector to emitter voltage VCE
2sd669a.pdf
2SD669, 2SD669ASilicon NPN EpitaxialApplicationLow frequency power amplifier complementary pair with 2SB649/AOutlineTO-126 MOD1. Emitter2. Collector3. Base1232SD669, 2SD669AAbsolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SD669 2SD669A UnitCollector to base voltage VCBO 180 180 VCollector to emitter voltage VCEO 120 160 VEmitter to base voltage VEBO
2sd667.pdf
2SD667, 2SD667ASilicon NPN EpitaxialApplication Low frequency power amplifier Complementary pair with 2SB647/AOutlineTO-92MOD1. Emitter2. Collector3. Base3212SD667, 2SD667AAbsolute Maximum Ratings (Ta = 25C)Item Symbol 2SD667 2SD667A UnitCollector to base voltage VCBO 120 120 VCollector to emitter voltage VCEO 80 100 VEmitter to base voltage VEBO 55V
2sd669-669a.pdf
2SD669/2SD669A NPN Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeTO-126C2.70.27.60.2FEATURES 1.30.24.00.1Power dissipation 10.80.2 PCM : 1mWTamb=25 O3.1 0.1Collector current 1 2 32.20.1 ICM : 1.5 A1.270.1Collector-base voltage 15.50.2V
2sd667a.pdf
2SD667A 1A , 120V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92MOD FEATURES AD Low Frequency Power Amplifier Complementary Pair with 2SB647A BKEFCLASSIFICATION OF hFE (1) CProduct-Rank 2SD667A-B 2SD667A-C 2SD667A-D Range 60~120 100~200 160~320 NG H1 Emitte
2sd669 2sd669a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD669 TO- 126C 2SD669A TRANSISTOR (NPN) FEATURES 1. EMITTER Low Frequency Power Amplifier Complementary Pair with 2SB649/A 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. BASE Symbol Parameter Value UnitVCBO Collector- Base Voltage 180 V VCEO Collector-E
2sd669al.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TO 126 2SD669AL TRANSISTOR (NPN) FEATURES 1. EMITTER Low Frequency Power Amplifier 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 170 V VEBO Emitter-Base Volt
2sd667 2sd667a.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate TransistorsTO-92MOD 2SD667,2SD667A TRANSISTOR (NPN)1. EMITTERFEATURES Low Frequency Power Amplifier2. COLLECTOR Complementary Pair with 2SB647/A3. BASE Equivalent Circuit D667=Device code Solid dot = Green molding compound device, D667if none, the normal device XXX=Code
2sd667-2sd667a to-92mod.pdf
2SD667/2SD667A TO-92MOD Transistor (NPN)TO-92MOD1. EMITTER 1 22. COLLECTOR 3 3. BASE Features Low frequency power amplifier 5.8006.200 Complementary pair with 2SB647/A 8.400MAXIMUM RATINGS (TA=25 unless otherwise noted) 8.8000.9001.100Symbol Parameter Value Units 0.400VCBO Collector- Base Voltage 120 V 0.600VCEO Collector-Emitter Voltage 2SD667 8
2sd667-2sd667a to-92l.pdf
2SD667/2SD667A TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.7005.100 2 3 1Features7.800 Low frequency power amplifier 8.200 Complementary pair with 2SB647/A 0.6000.800MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.350Symbol Parameter Value Units0.55013.80014.200VCBO Collector- Base Voltage 120 V VCEO Collector-Emitter Vol
2sd669-2sd669a to-126.pdf
2SD669/2SD669A(NPN) TO-126 TransistorTO-1261. EMITTER 2. COLLECTOR 3. BASE 3 21 Features2.5007.4002.9001.1007.800 Low frequency power amplifier complementary pair 1.500with 2SB649/A 3.9003.0004.100MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.20010.6000.0000.300Symbol Parameter Value Units11.000VCBO Collector- Base Voltage 180 V 2.
2sd669.pdf
2SD669/2SD669ANPN Epitaxial Planar Transistors1. EMITTER2. COLLECTORP b Lead(Pb)-Free3. BASE123TO-126CABSOLUTE MAXIMUM RATINGS(TA=25C)Rating Symbol 2SD669 2SD669A UnitVCBO180 180 VCollector-Emitter VoltageVCEO120 160 VCollector-Base VoltageVEBOEmitter-Base Voltage 5.0 5.0 VCollector Current IC1.5 APD1.0 WPower DisspationTj150 CJunction T
2sd669ad.pdf
2SD669AD Rev.E May.-2016 DATA SHEET / Descriptions TO-252 NPN Silicon NPN transistor in a TO-252 Plastic Package. / Features 2SB649AD Complementary pair with 2SB649AD. / Applications Low frequency power amplifier. / Equivalent Circuit / Pinni
2sd667a.pdf
2SD667(A)(BR3DG667(A)L) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features 2SB647(BR3CG647L)/2SB647A(BR3CG647AL) Complementary pair with 2SB647(BR3CG647L)/2SB647A(BR3CG647AL). / Applications Low frequency power ampli
2sd669a.pdf
2SD669(A)(BR3DA669(A)QF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features 2SB649(BR3CA649QF)/2SB649A(BR3CA649AQF) Complementary pair with 2SB649(BR3CA649QF)/2SB649A(BR3CA649AQF). / Applications Low frequency power
2sd669 2sd669a.pdf
2SD669(A) Rev.F Mar.-2016 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features 2SB649(A)Complementary pair with 2SB649(A). / Applications Low frequency power amplifier. / Equivalent Circuit / P
2sd667 2sd667a.pdf
2SD667(A) Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features 2SB647(A)Complementary pair with 2SB647(A). / Applications Low frequency power amplifier. / Equivalent Circuit / P
2sd669am-a.pdf
RoHS RoHS 2SD669AM SeriesSEMICONDUCTORNell High Power ProductsBipolar General Purpose NPN Power Transistor1.5A / 120V, 160V / 20W2.7 0.48.00.5+0.153.1- 0.11.1(B)32(C)(E)1TO-1260.82.290.5 2.290.5 0.55 1.2 APPLICATIONSCLow frequency power amplifier complementaryE C B Bpair with 2SB649AM/2SB649AM-ANPNEAll dimensions in millimeters
2sd663.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD663DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 500V(Min)CEO(SUS)High Power DissipationLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line operated switchmode applications such as:Switching regu
2sd669.pdf
isc Silicon NPN Power Transistor 2SD669DESCRIPTIONHigh Collector Current-I = 1.5ACHigh Collector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageComplement to Type 2SB649Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RA
2sd669a.pdf
isc Silicon NPN Power Transistor 2SD669ADESCRIPTIONHigh Collector Current-I = 1.5ACHigh Collector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageComplement to Type 2SD649Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM R
2sd665.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD665DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOHigh Current CapabilityExcellent Safe Operating AreaComplement to Type 2SB645Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.Recommended for
2sd669 2sd669a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD669 2SD669A DESCRIPTION With TO-126 package Complement to type 2SB649/649A High breakdown voltage VCEO:120/160V High current 1.5A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collect
Datasheet: 2SC628 , 2SC629 , 2SC63 , 2SC631 , 2SC631A , 2SC631AS , 2SC632 , 2SC632A , TIP36C , 2SC633A , 2SC634 , 2SC634A , 2SC635 , 2SC636 , 2SC637 , 2SC638 , 2SC639 .
