Биполярный транзистор 2SD661A
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD661A
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.4
W
Макcимально допустимое напряжение коллектор-база (Ucb): 55
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 55
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7
V
Макcимальный постоянный ток коллектора (Ic): 0.1
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 200(typ)
MHz
Ёмкость коллекторного перехода (Cc): 2.2
pf
Статический коэффициент передачи тока (hfe): 210
Корпус транзистора:
SC71
- подбор биполярного транзистора по параметрам
2SD661A
Datasheet (PDF)
..1. Size:51K 1
2sd661a.pdf 


Transistor2SD661, 2SD661ASilicon NPN epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0R0.9FeaturesLow noise voltage NV.High foward current transfer ratio hFE.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1 0.45 0.05Abso
8.1. Size:55K panasonic
2sd661 e.pdf 


Transistor2SD661, 2SD661ASilicon NPN epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0R0.9FeaturesLow noise voltage NV.High foward current transfer ratio hFE.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1 0.45 0.05Abso
8.2. Size:51K panasonic
2sd661.pdf 


Transistor2SD661, 2SD661ASilicon NPN epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0R0.9FeaturesLow noise voltage NV.High foward current transfer ratio hFE.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1 0.45 0.05Abso
9.1. Size:39K 1
2sd662b.pdf 


Transistor2SD662, 2SD662BSilicon NPN epitaxial planer typeFor high breakdown voltage general amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High collector to emitter voltage VCEO.High transition frequency fT.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85Absolute Maximum
9.2. Size:284K mcc
2sd667l.pdf 


MCCTM Micro Commercial Components20736 Marilla Street Chatsworth2SD667LMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Low Frequency Power Amplifier NPN Complementary Pair with 2SB647/A Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1Transistor Lead Free Finish/Rohs Compl
9.3. Size:557K mcc
2sd667a-b-c-d 2sd667-b-c-d.pdf 


2SD667(A)-BMCCMicro Commercial ComponentsTM2SD667(A)-C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SD667(A)-DPhone: (818) 701-4933Fax: (818) 701-4939Features Epoxy meets UL 94 V-0 flammability ratingNPN Silicon Moisture Sensitivity Level 1 Capable of 0.9Watts of Power Dissipation. Capable of 0.9Watts of Power Dissipation.Pla
9.5. Size:39K panasonic
2sd662.pdf 


Transistor2SD662, 2SD662BSilicon NPN epitaxial planer typeFor high breakdown voltage general amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High collector to emitter voltage VCEO.High transition frequency fT.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85Absolute Maximum
9.6. Size:43K panasonic
2sd662 e.pdf 


Transistor2SD662, 2SD662BSilicon NPN epitaxial planer typeFor high breakdown voltage general amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High collector to emitter voltage VCEO.High transition frequency fT.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85Absolute Maximum
9.7. Size:439K utc
2sd669 2sd669a.pdf 


UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD669xL-x-AA3-R 2SD669xG-x-AA3-R SOT-223 B C E Tape Reel2SD669xL-x-AB3-R 2SD669xG-
9.8. Size:331K utc
2sd667.pdf 


UNISONIC TECHNOLOGIES CO., LTD 2SD667 NPN SILICON TRANSISTOR SILICON NPN EPITAXIAL DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier. FEATURES * Low frequency power amplifier ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD667L-x-AE3-R 2SD6
9.9. Size:32K hitachi
2sd667.pdf 


2SD667, 2SD667ASilicon NPN EpitaxialApplication Low frequency power amplifier Complementary pair with 2SB647/AOutlineTO-92MOD1. Emitter2. Collector3. Base3212SD667, 2SD667AAbsolute Maximum Ratings (Ta = 25C)Item Symbol 2SD667 2SD667A UnitCollector to base voltage VCBO 120 120 VCollector to emitter voltage VCEO 80 100 VEmitter to base voltage VEBO 55V
9.10. Size:36K hitachi
2sd669a.pdf 


2SD669, 2SD669ASilicon NPN EpitaxialApplicationLow frequency power amplifier complementary pair with 2SB649/AOutlineTO-126 MOD1. Emitter2. Collector3. Base1232SD669, 2SD669AAbsolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SD669 2SD669A UnitCollector to base voltage VCBO 180 180 VCollector to emitter voltage VCEO 120 160 VEmitter to base voltage VEBO
9.12. Size:32K hitachi
2sd669.pdf 


2SD669, 2SD669ASilicon NPN EpitaxialADE-208-899 (Z)1st. EditionSep. 2000ApplicationLow frequency power amplifier complementary pair with 2SB649/AOutlineTO-126 MOD1. Emitter2. Collector3. Base1232SD669, 2SD669AAbsolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SD669 2SD669A UnitCollector to base voltage VCBO 180 180 VCollector to emitter voltage VCE
9.13. Size:64K secos
2sd667a.pdf 

2SD667A 1A , 120V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92MOD FEATURES AD Low Frequency Power Amplifier Complementary Pair with 2SB647A BKEFCLASSIFICATION OF hFE (1) CProduct-Rank 2SD667A-B 2SD667A-C 2SD667A-D Range 60~120 100~200 160~320 NG H1 Emitte
9.14. Size:236K secos
2sd669-669a.pdf 


2SD669/2SD669A NPN Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeTO-126C2.70.27.60.2FEATURES 1.30.24.00.1Power dissipation 10.80.2 PCM : 1mWTamb=25 O3.1 0.1Collector current 1 2 32.20.1 ICM : 1.5 A1.270.1Collector-base voltage 15.50.2V
9.15. Size:547K jiangsu
2sd667 2sd667a.pdf 


JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate TransistorsTO-92MOD 2SD667,2SD667A TRANSISTOR (NPN)1. EMITTERFEATURES Low Frequency Power Amplifier2. COLLECTOR Complementary Pair with 2SB647/A3. BASE Equivalent Circuit D667=Device code Solid dot = Green molding compound device, D667if none, the normal device XXX=Code
9.16. Size:110K jiangsu
2sd669 2sd669a.pdf 


JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD669 TO- 126C 2SD669A TRANSISTOR (NPN) FEATURES 1. EMITTER Low Frequency Power Amplifier Complementary Pair with 2SB649/A 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. BASE Symbol Parameter Value UnitVCBO Collector- Base Voltage 180 V VCEO Collector-E
9.17. Size:247K jiangsu
2sd669al.pdf 


JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TO 126 2SD669AL TRANSISTOR (NPN) FEATURES 1. EMITTER Low Frequency Power Amplifier 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 170 V VEBO Emitter-Base Volt
9.18. Size:180K lge
2sd669-2sd669a to-126.pdf 


2SD669/2SD669A(NPN) TO-126 TransistorTO-1261. EMITTER 2. COLLECTOR 3. BASE 3 21 Features2.5007.4002.9001.1007.800 Low frequency power amplifier complementary pair 1.500with 2SB649/A 3.9003.0004.100MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.20010.6000.0000.300Symbol Parameter Value Units11.000VCBO Collector- Base Voltage 180 V 2.
9.19. Size:257K lge
2sd667-2sd667a to-92mod.pdf 


2SD667/2SD667A TO-92MOD Transistor (NPN)TO-92MOD1. EMITTER 1 22. COLLECTOR 3 3. BASE Features Low frequency power amplifier 5.8006.200 Complementary pair with 2SB647/A 8.400MAXIMUM RATINGS (TA=25 unless otherwise noted) 8.8000.9001.100Symbol Parameter Value Units 0.400VCBO Collector- Base Voltage 120 V 0.600VCEO Collector-Emitter Voltage 2SD667 8
9.20. Size:215K lge
2sd667-2sd667a to-92l.pdf 


2SD667/2SD667A TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.7005.100 2 3 1Features7.800 Low frequency power amplifier 8.200 Complementary pair with 2SB647/A 0.6000.800MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.350Symbol Parameter Value Units0.55013.80014.200VCBO Collector- Base Voltage 120 V VCEO Collector-Emitter Vol
9.21. Size:245K wietron
2sd669.pdf 


2SD669/2SD669ANPN Epitaxial Planar Transistors1. EMITTER2. COLLECTORP b Lead(Pb)-Free3. BASE123TO-126CABSOLUTE MAXIMUM RATINGS(TA=25C)Rating Symbol 2SD669 2SD669A UnitVCBO180 180 VCollector-Emitter VoltageVCEO120 160 VCollector-Base VoltageVEBOEmitter-Base Voltage 5.0 5.0 VCollector Current IC1.5 APD1.0 WPower DisspationTj150 CJunction T
9.22. Size:665K blue-rocket-elect
2sd669ad.pdf 


2SD669AD Rev.E May.-2016 DATA SHEET / Descriptions TO-252 NPN Silicon NPN transistor in a TO-252 Plastic Package. / Features 2SB649AD Complementary pair with 2SB649AD. / Applications Low frequency power amplifier. / Equivalent Circuit / Pinni
9.23. Size:897K blue-rocket-elect
2sd667 2sd667a.pdf 


2SD667(A) Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features 2SB647(A)Complementary pair with 2SB647(A). / Applications Low frequency power amplifier. / Equivalent Circuit / P
9.24. Size:1131K blue-rocket-elect
2sd669 2sd669a.pdf 


2SD669(A) Rev.F Mar.-2016 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features 2SB649(A)Complementary pair with 2SB649(A). / Applications Low frequency power amplifier. / Equivalent Circuit / P
9.25. Size:557K blue-rocket-elect
2sd667a.pdf 


2SD667(A)(BR3DG667(A)L) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features 2SB647(BR3CG647L)/2SB647A(BR3CG647AL) Complementary pair with 2SB647(BR3CG647L)/2SB647A(BR3CG647AL). / Applications Low frequency power ampli
9.26. Size:473K blue-rocket-elect
2sd669a.pdf 


2SD669(A)(BR3DA669(A)QF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features 2SB649(BR3CA649QF)/2SB649A(BR3CA649AQF) Complementary pair with 2SB649(BR3CA649QF)/2SB649A(BR3CA649AQF). / Applications Low frequency power
9.27. Size:163K nell
2sd669am-a.pdf 


RoHS RoHS 2SD669AM SeriesSEMICONDUCTORNell High Power ProductsBipolar General Purpose NPN Power Transistor1.5A / 120V, 160V / 20W2.7 0.48.00.5+0.153.1- 0.11.1(B)32(C)(E)1TO-1260.82.290.5 2.290.5 0.55 1.2 APPLICATIONSCLow frequency power amplifier complementaryE C B Bpair with 2SB649AM/2SB649AM-ANPNEAll dimensions in millimeters
9.28. Size:201K inchange semiconductor
2sd665.pdf 


INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD665DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOHigh Current CapabilityExcellent Safe Operating AreaComplement to Type 2SB645Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.Recommended for
9.29. Size:280K inchange semiconductor
2sd669 2sd669a.pdf 


Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD669 2SD669A DESCRIPTION With TO-126 package Complement to type 2SB649/649A High breakdown voltage VCEO:120/160V High current 1.5A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collect
9.30. Size:216K inchange semiconductor
2sd669a.pdf 


isc Silicon NPN Power Transistor 2SD669ADESCRIPTIONHigh Collector Current-I = 1.5ACHigh Collector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageComplement to Type 2SD649Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM R
9.31. Size:209K inchange semiconductor
2sd669.pdf 


isc Silicon NPN Power Transistor 2SD669DESCRIPTIONHigh Collector Current-I = 1.5ACHigh Collector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageComplement to Type 2SB649Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RA
9.32. Size:192K inchange semiconductor
2sd663.pdf 


INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD663DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 500V(Min)CEO(SUS)High Power DissipationLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line operated switchmode applications such as:Switching regu
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