All Transistors. CD8050D Datasheet

 

CD8050D Datasheet, Equivalent, Cross Reference Search


   Type Designator: CD8050D
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 20(max) pF
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: TO92

 CD8050D Transistor Equivalent Substitute - Cross-Reference Search

   

CD8050D Datasheet (PDF)

 ..1. Size:816K  1
 cd8050b cd8050c cd8050d.pdf

CD8050D CD8050D

Continental Device India Pvt. LimitedAn IATF 16949, ISO9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR TRANSISTORS CD8050TO-92Leaded PackageRoHS compliantABSOLUTE MAXIMUM RATINGS (Ta = 25 OC)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 40 VCollector -Emitter Voltage VCEO 25 VEmitter Base Voltage VEBO 6 VCollector Current IC 2 ACollector Power Dissipat

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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