CD8050D Datasheet. Specs and Replacement
Type Designator: CD8050D 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 20 max pF
Forward Current Transfer Ratio (hFE), MIN: 160
Package: TO92
CD8050D Substitution
- BJT ⓘ Cross-Reference Search
CD8050D datasheet
Continental Device India Pvt. Limited An IATF 16949, ISO9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTORS CD8050 TO-92 Leaded Package RoHS compliant ABSOLUTE MAXIMUM RATINGS (Ta = 25 OC) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 40 V Collector -Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 6 V Collector Current IC 2 A Collector Power Dissipat... See More ⇒
Detailed specifications: 2SC3080, 2SD661A, 2SD662B, D965-KEHE, GN1A3Q, SL13003, CD8050B, CD8050C, TIP41C, 3DD13005A, 3DD13005D, 3DD13005ED, 3DD13005MD, 3DD13007MD, 3DD13009E, 3DD4110PL, 3DD4120PL
Keywords - CD8050D pdf specs
CD8050D cross reference
CD8050D equivalent finder
CD8050D pdf lookup
CD8050D substitution
CD8050D replacement
