BA16P25A Datasheet, Equivalent, Cross Reference Search
Type Designator: BA16P25A
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 16 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 500(max) pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO-3PLT
BA16P25A Transistor Equivalent Substitute - Cross-Reference Search
BA16P25A Datasheet (PDF)
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ba16n25a ba16p25a.pdf
ba16n25a ba16p25a.pdf
Complementary NPN-PNP Power Bipolar Transistor R BA16N25A(NPN) BA16P25A(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =250V (min) High collector voltageV =250V (min) CEO CEONPN-PNP Complementary NPN
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
