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BP4N45S Specs and Replacement


   Type Designator: BP4N45S
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 800 V
   Maximum Collector-Emitter Voltage |Vce|: 450 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO126 TO220
 

 BP4N45S Substitution

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BP4N45S detailed specifications

 ..1. Size:573K  jilin sino
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BP4N45S

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R BP4N45S MAIN CHARACTERISTICS Package I 4A C V 450V CEO P (TO-126) 40W C P (TO-220C) 75W C TO-126 TO-220C APPLICATIONS Energy-saving light Electronic ballasts High frequency switching ... See More ⇒

Detailed specifications: BM05P06A , BM05P06B , BM1P40A , BM3P03A , BM8N08A , BP15N98T , BP18N98S , BP4N38S , 2222A , C4977 , HM8050 , HM8550 , HMA6801 , HMBT9014H , HMBT9014L , HMC6802 , HS8050 .

History: 2SA530 | MJH11017

Keywords - BP4N45S transistor specs

 BP4N45S cross reference
 BP4N45S equivalent finder
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