1702 PDF and Equivalents Search

 0.1. Size:601K  rca

 2n1702.pdf

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 0.2. Size:90K  sanyo

 2sa1702.pdf

Ordering number EN3091 PNP Epitaxial Planar Silicon Transistor 2SA1702 High-Current Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm Low saturation votlage. 2064 Large current capacity. [2SA1702] Fast switching speed. E Emitter C Collector B Base SANYO NMP Specifications Absolute Maximum Ratings at Ta = 25 C ... See More ⇒

 0.3. Size:197K  nec

 2sd1702.pdf

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 0.4. Size:1053K  kexin

 2sd1702.pdf

SMD Type Transistors NPN Transistors 2SD1702 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.8A Collector Emitter Voltage VCEO=50V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VE... See More ⇒

 0.5. Size:320K  panjit

 pjv1702.pdf

PPJV1702 20V N-Channel MOSFET SOT-723 Unit inch(mm) 20 V 0.65 A Voltage Current Features Switching with Low RDS(ON) Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case SOT-723 Package Terminals Solderable per MIL-STD-750, Method 2026 Approx. Weight 0.... See More ⇒

 0.6. Size:154K  chenmko

 chm1702xgp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM1702XGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 500 mAmpere FEATURE * Small surface mounting type. (SC-62/SOT-89) * High density cell design for extremely low RDS(ON). SC-62/SOT-89 * Rugged and reliable. * High saturation current capability. CONSTRUCTION 4.6MAX. 1.6MAX. * N-Channel Enhancement 1.7MA... See More ⇒

 0.7. Size:200K  inchange semiconductor

 pmd1702k.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD1702K DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min) Complement to type PMD1602K APPLICATIONS Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER V... See More ⇒

 0.8. Size:218K  inchange semiconductor

 2n1702.pdf

isc Silicon NPN Power Transistor 2N1702 DESCRIPTION Collector-Emitter Breakdown Voltage- V =60V(Min) CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60 V... See More ⇒