1702 Datasheet, Equivalent, Cross Reference Search
Type Designator: 1702
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 110
Noise Figure, dB: -
Package: TO92
1702 Transistor Equivalent Substitute - Cross-Reference Search
1702 Datasheet (PDF)
2sa1702.pdf
Ordering number:EN3091PNP Epitaxial Planar Silicon Transistor2SA1702High-Current Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm Low saturation votlage.2064 Large current capacity.[2SA1702] Fast switching speed.E : EmitterC : CollectorB : BaseSANYO : NMPSpecificationsAbsolute Maximum Ratings at Ta = 25C
2sd1702.pdf
SMD Type TransistorsNPN Transistors2SD1702SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.8A Collector Emitter Voltage VCEO=50V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VE
pjv1702.pdf
PPJV1702 20V N-Channel MOSFET SOT-723 Unit : inch(mm) 20 V 0.65 A Voltage Current Features Switching with Low RDS(ON) Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case: SOT-723 Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.
chm1702xgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM1702XGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 500 mAmpereFEATURE* Small surface mounting type. (SC-62/SOT-89)* High density cell design for extremely low RDS(ON). SC-62/SOT-89* Rugged and reliable.* High saturation current capability.CONSTRUCTION4.6MAX. 1.6MAX.* N-Channel Enhancement1.7MA
pmd1702k.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD1702K DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min) Complement to type PMD1602K APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER V
2n1702.pdf
isc Silicon NPN Power Transistor 2N1702DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =60V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage 60 VCBOV Collector-Emitter Voltage 60 V
Datasheet: 16606 , 1664 , 16656 , 16668 , 16810 , 16811 , 16924 , 1701 , 2SD1555 , 17322 , 17323 , 17375 , 17389 , 17390 , 17391 , 17484 , 17520 .