All Transistors. 2SA1327Y Datasheet

 

2SA1327Y Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA1327Y
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 11 A
   Max. Operating Junction Temperature (Tj): 120 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 400 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO218

 2SA1327Y Transistor Equivalent Substitute - Cross-Reference Search

   

2SA1327Y Datasheet (PDF)

 7.1. Size:175K  toshiba
2sa1327a.pdf

2SA1327Y
2SA1327Y

 7.2. Size:202K  jmnic
2sa1327.pdf

2SA1327Y
2SA1327Y

JMnic Product Specification Silicon PNP Power Transistors 2SA1327 DESCRIPTION With TO-220Fa package Low collector saturation voltage High current capacity APPLICATIONS Strobe flash applications Audio power amplifier applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT

 7.3. Size:218K  inchange semiconductor
2sa1327.pdf

2SA1327Y
2SA1327Y

isc Silicon PNP Power Transistor 2SA1327DESCRIPTIONLow Collector Saturation Voltage-: V = -0.5V(Max.)@I = -8ACE(sat) CHigh DC Current Gain-: hFE= 70(Min.)@ I = -8ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSStrobe flash applications.Audio power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top