2SA1357O Specs and Replacement
Type Designator: 2SA1357O
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 170 MHz
Collector Capacitance (Cc): 62 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO126
2SA1357O Substitution
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2SA1357O datasheet
2SA1357(3CA1357) PNP /SILICON PNP TRANSISTOR , Purpose Strobe flash applications, audio power amplifier applications. I V C CE(sat) Features High I ,low V . C CE(sat) /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -35 V CBO ... See More ⇒
isc Silicon PNP Power Transistor 2SA1357 DESCRIPTION High Collector Current-I = -5.0A C DC Current Gain- h = 70(Min)@I = -4A FE C Low Saturation Voltage V = -1.0V(Max)@I = -4A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Strobe flash applications. Audio power amplifier applications. ABSOLUTE MAXIMUM RATI... See More ⇒
Detailed specifications: 2SA1353E, 2SA1353F, 2SA1354, 2SA1355, 2SA1356, 2SA1356O, 2SA1356Y, 2SA1357, 2SA1015, 2SA1357Y, 2SA1358, 2SA1358O, 2SA1358Y, 2SA1359, 2SA1359O, 2SA1359Y, 2SA136
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