2SA1358 PDF and Equivalents Search

 

2SA1358 Specs and Replacement

Type Designator: 2SA1358

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO126

 2SA1358 Substitution

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2SA1358 datasheet

 ..1. Size:178K  toshiba

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2SA1358

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 ..2. Size:196K  inchange semiconductor

2sa1358.pdf pdf_icon

2SA1358

isc Silicon PNP Power Transistor 2SA1358 DESCRIPTION High Collector-Emitter Breakdown Voltage V = -120V(Min) (BR)CEO Complement to Type 2SC3421 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collecto... See More ⇒

 0.1. Size:222K  inchange semiconductor

2sa1358-z.pdf pdf_icon

2SA1358

isc Silicon PNP Power Transistor 2SA1358-Z DESCRIPTION With TO-252(DPAK) packaging Excellent linearity of h FE Low collector-to-emitter saturation voltage Fast switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒

 8.1. Size:179K  toshiba

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2SA1358

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Detailed specifications: 2SA1354, 2SA1355, 2SA1356, 2SA1356O, 2SA1356Y, 2SA1357, 2SA1357O, 2SA1357Y, BC639, 2SA1358O, 2SA1358Y, 2SA1359, 2SA1359O, 2SA1359Y, 2SA136, 2SA1360, 2SA1360O

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