17322 Specs and Replacement
Type Designator: 17322
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 55 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO220
17322 Substitution
- BJT ⓘ Cross-Reference Search
17322 datasheet
CSD17322Q5A www.ti.com SLPS330 JUNE 2011 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17322Q5A 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 30 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 3.6 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 1.1 nC Avalanche Rated VGS = 4.5V 10 m RDS(on) Dra... See More ⇒
Detailed specifications: 1664 , 16656 , 16668 , 16810 , 16811 , 16924 , 1701 , 1702 , NJW0281G , 17323 , 17375 , 17389 , 17390 , 17391 , 17484 , 17520 , 17521 .
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