17322 Datasheet, Equivalent, Cross Reference Search
Type Designator: 17322
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 55 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO220
17322 Transistor Equivalent Substitute - Cross-Reference Search
17322 Datasheet (PDF)
0.1. Size:825K texas
csd17322q5a.pdf
csd17322q5a.pdf
CSD17322Q5Awww.ti.com SLPS330 JUNE 201130V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17322Q5A1FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 30 V Ultralow Qg and QgdQg Gate Charge Total (4.5V) 3.6 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 1.1 nC Avalanche RatedVGS = 4.5V 10 mRDS(on) Dra
Datasheet: 1664 , 16656 , 16668 , 16810 , 16811 , 16924 , 1701 , 1702 , 2SD313 , 17323 , 17375 , 17389 , 17390 , 17391 , 17484 , 17520 , 17521 .
