2SA1435 Datasheet and Replacement
Type Designator: 2SA1435
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 15 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 9 pF
Forward Current Transfer Ratio (hFE), MIN: 500
Noise Figure, dB: -
Package: TO92
2SA1435 Substitution
2SA1435 Datasheet (PDF)
2sa1435.pdf

Ordering number:ENN1856APNP Epitaxial Planar Silicon Transistor2SA1435High hFE, AF Amplifier ApplicationsApplications Package Dimensions Low frequency general-purpose amplifiers, drivers,unit:mmmuting circuits.2003B[2SA1435]Features 5.04.04.0 Adoption of MBIT process. High DC current gain (hFE=500 to 1200). Large current capacity. Low colletor-to-e
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N1142
Keywords - 2SA1435 transistor datasheet
2SA1435 cross reference
2SA1435 equivalent finder
2SA1435 lookup
2SA1435 substitution
2SA1435 replacement
History: 2N1142



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