2N1365 Datasheet, Equivalent, Cross Reference Search

   Type Designator: 2N1365
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 106 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 50 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 110 °C
   Transition Frequency (ft): 0.1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO3

2N1365 Transistor Equivalent Substitute - Cross-Reference Search

BUY TRANSISTORS