2SA1580-5 PDF and Equivalents Search

 2sa1580 2sc4104.pdf

Ordering number EN3172 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1580/2SC4104 High-Definition CRT Display Applications Features Package Dimensions High fT. unit mm Small reverse transfer capacitance. 2018A Adoption of FBET process. [2SA1580/2SC4104] C Collector B Base E Emitter ( ) 2SA1580 SANYO CP Specifications Absolute Maximum Ratings at Ta = 25 ... See More ⇒

 2sa1580.pdf

SMD Type or SMD Type TransistICs PNP Transistors 2SA1580 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features High fT. Small reverse transfer capacitance. 1 2 +0.1 +0.05 0.95 -0.1 Adoption of FBET process. 0.1 -0.01 +0.1 1.9 -0.1 Complementary to 2SC4104 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base vo... See More ⇒

 2sa1588.pdf

2SA1588 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1588 Audio Frequency Low Power Amplifier Applications Unit mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity hFE (2) = 25 (min) at V = -6 V, I = -400 mA CE C Complementary to 2SC4118 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Coll... See More ⇒

 2sa1586.pdf

2SA1586 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1586 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage and high current VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) High hFE hFE = 70 400 Low noise NF = 1dB (typ.), 10dB (max) Complementary to 2... See More ⇒

 2sa1586-o 2sa1586-y 2sa1586-gr.pdf

2SA1586 Bipolar Transistors Silicon PNP Epitaxial Type 2SA1586 1. Applications Low-Frequency Amplifiers Audio Frequency General Purpose Amplifier Applications 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) High voltage VCEO = -50 V (3) High collector current IC = -150 mA (max) (4) High hFE hFE = 70 to 400 (5) Excellent hFE linearity hFE... See More ⇒

 2sa1587.pdf

2SA1587 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1587 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage VCEO = -120 V Excellent h linearity h (I = -0.1 mA)/h (I = -2 mA) FE FE C FE C = 0.95 (typ.) High hFE hFE = 200 700 Low noise NF = 1dB (typ.), 10dB (max) Complementary to 2SC4117 Small packag... See More ⇒

 2sa1587gr 2sa1587bl.pdf

2SA1587 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1587 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage VCEO = -120 V Excellent hFE linearity hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE hFE = 200 to 700 Low noise NF = 1dB (typ.), 10dB (max) Complementary to 2SC4117 Small package ... See More ⇒

 2sa1588-o 2sa1588-y 2sa1588-gr.pdf

2SA1588 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1588 Audio Frequency Low Power Amplifier Applications Unit mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity hFE (2) = 25 (min) at VCE = -6 V, IC = -400 mA Complementary to 2SC4118 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collecto... See More ⇒

 2sa1582 2sc4113.pdf

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 2sb1424 2sa1585s.pdf

2SB1424 / 2SA1585S Transistors Low VCE(sat) Transistor (-20V, -3A) 2SB1424 / 2SA1585S External dimensions (Unit mm) Features 1) Low VCE(sat). 2SB1424 2SA1585S VCE(sat) = -0.2V (Typ.) 4 0.2 2 0.2 4.5+0.2 (IC/IB = -2A / -0.1A) -0.1 1.5 0.1 1.6 0.1 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. 0.45+0.15 (1) (2) (3) -0.05 ... See More ⇒

 2sa1585s 2sb1424 2sb1424.pdf

Transistors Low VCE(sat) Transistor (*20V, *3A) 2SB1424 / 2SA1585S FFeatures FExternal dimensions (Units mm) 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC/IB = *2A / *0.1A) 2) Excellent DC current gain charac- teristics. 3) Complements the 2SD2150 / 2SC4115S. FStructure Epitaxial planar type PNP silicon transistor FAbsolute maximum ratings (Ta = 25_C) (96-596-A74) 201 Transist... See More ⇒

 2sa1585s-q.pdf

2SA1585S MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SA1585S-Q Micro Commercial Components CA 91311 Phone (818) 701-4933 2SA1585S-R Fax (818) 701-4939 Features PNP Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Transistors Moi... See More ⇒

 2sa1585s-r.pdf

2SA1585S MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SA1585S-Q Micro Commercial Components CA 91311 Phone (818) 701-4933 2SA1585S-R Fax (818) 701-4939 Features PNP Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Transistors Moi... See More ⇒

 2sa1581.pdf

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 2sa1586.pdf

2SA1586 -0.15 A, -50 V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES High DC Current Gain High Voltage and High Current A L Complementary to 2SC4116 3 3 Small Package Top View C B 1 1 2 2 K E APPLICATIONS General Purpose Amplifi... See More ⇒

 2sa1585.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors JC T 2SA1585 TRANSISTOR (PNP) SOT-23 FEATURES Low VCE(sat) Excellent DC current gain characteristics. Power dissipation 1. BASE MAXIMUM RATINGS* TA=25 unless otherwise noted 2. EMITTER 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage -20 V VCEO Coll... See More ⇒

 2sa1586.pdf

2SA1 58 6 TRANSISTOR(PNP) FEATURES SOT 323 High DC Current Gain High Voltage and High Current. Complementary to 2SC4116 Small Package APPLICATIONS General Purpose Amplification. 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter ... See More ⇒

 2sa1585s to-92s.pdf

2SA1585S TO-92S Transistor (PNP) 1. EMITTER TO-92S 2. COLLECTOR 1 2 3 3. BASE Features Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A) Excellent DC current gain characteristics. Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter... See More ⇒

 2sa1588.pdf

SMD Type Transistors PNP Transistors 2SA1588 Features Excellent hFE linearity hFE (2) = 25 (min) at VCE = -6 V, IC = -400 mA Complementary to 2SC4118 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -35 Collector - Emitter Voltage VCEO -30 V Emitter - Base Voltage VEBO -5 Collector... See More ⇒

 2sa1586.pdf

SMD Type Transistors PNP Transistors 2SA1586 Features High DC Current Gain High Voltage and High Current. Complementary to 2SC4116 Small Package 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collec... See More ⇒

 2sa1587.pdf

SMD Type Transistors PNP Transistors 2SA1587 Features High voltage Low noise Complementary to 2SC4117 Small Package 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC... See More ⇒