2SA1583 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA1583
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 550 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 135 °C
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SP0
2SA1583 Transistor Equivalent Substitute - Cross-Reference Search
2SA1583 Datasheet (PDF)
4.1. 2sa1585s-q.pdf 
Size:351K _update
2SA1585S MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SA1585S-Q Micro Commercial Components CA 91311 Phone: (818) 701-4933 2SA1585S-R Fax: (818) 701-4939 Features PNP • Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate • Epoxy meets UL 94 V-0 flammability rating Transistors • Moi
4.2. 2sa1585s-r.pdf Size:351K _update
2SA1585S MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SA1585S-Q Micro Commercial Components CA 91311 Phone: (818) 701-4933 2SA1585S-R Fax: (818) 701-4939 Features PNP • Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate • Epoxy meets UL 94 V-0 flammability rating Transistors • Moi
4.3. 2sa1588.pdf Size:215K _toshiba
2SA1588 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1588 Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at V = -6 V, I = -400 mA CE C • Complementary to 2SC4118 Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Coll
4.4. 2sa1587.pdf Size:323K _toshiba
2SA1587 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1587 Audio Frequency General Purpose Amplifier Applications Unit: mm • High voltage: VCEO = -120 V • Excellent h linearity: h (I = -0.1 mA)/h (I = -2 mA) FE FE C FE C = 0.95 (typ.) • High hFE: hFE = 200~700 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SC4117 • Small packag
4.5. 2sa1586.pdf Size:200K _toshiba
2SA1586 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1586 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = -50 V, IC = -150 mA (max) • Excellent hFE linearity: hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) • High hFE: hFE = 70~400 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2
4.6. 2sa1580.pdf Size:19K _sanyo
Ordering number:EN3172 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1580/2SC4104 High-Definition CRT Display Applications Features Package Dimensions High fT. unit:mm Small reverse transfer capacitance. 2018A Adoption of FBET process. [2SA1580/2SC4104] C : Collector B : Base E : Emitter ( ) : 2SA1580 SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C Para
4.7. 2sa1582.pdf Size:88K _sanyo
4.8. 2sa1585s 2sb1424.pdf Size:101K _rohm
Transistors Low VCE(sat) Transistor (*20V, *3A) 2SB1424 / 2SA1585S FFeatures FExternal dimensions (Units: mm) 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC/IB = *2A / *0.1A) 2) Excellent DC current gain charac- teristics. 3) Complements the 2SD2150 / 2SC4115S. FStructure Epitaxial planar type PNP silicon transistor FAbsolute maximum ratings (Ta = 25_C) (96-596-A74) 201 Transistors
4.9. 2sb1424 2sa1585s.pdf Size:81K _rohm
2SB1424 / 2SA1585S Transistors Low VCE(sat) Transistor (-20V, -3A) 2SB1424 / 2SA1585S External dimensions (Unit : mm) Features 1) Low VCE(sat). 2SB1424 2SA1585S VCE(sat) = -0.2V (Typ.) 40.2 20.2 4.5+0.2 (IC/IB = -2A / -0.1A) -0.1 1.50.1 1.60.1 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. 0.45+0.15 (1) (2) (3) -0.05 0.4+0.
4.10. 2sa1581.pdf Size:76K _no
4.11. 2sa1586.pdf Size:77K _secos
2SA1586 -0.15 A, -50 V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES ? High DC Current Gain ? High Voltage and High Current A L ? Complementary to 2SC4116 3 3 ? Small Package Top View C B 1 1 2 2 K E APPLICATIONS ? General Purpose Amplification D H
4.12. 2sa1586.pdf Size:278K _htsemi
2SA1 58 6 TRANSISTOR(PNP) FEATURES SOT–323 ? High DC Current Gain ? High Voltage and High Current. ? Complementary to 2SC4116 ? Small Package APPLICATIONS ? General Purpose Amplification. 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25? unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V
4.13. 2sa1585s to-92s.pdf Size:242K _lge
2SA1585S TO-92S Transistor (PNP) 1. EMITTER TO-92S 2. COLLECTOR 1 2 3 3. BASE Features Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A) Excellent DC current gain characteristics. Power dissipation MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base
4.14. 2sa1580.pdf Size:503K _kexin
SMD Type or SMD Type TransistICs PNP Transistors 2SA1580 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features High fT. Small reverse transfer capacitance. 1 2 +0.1 +0.05 0.95 -0.1 Adoption of FBET process. 0.1 -0.01 +0.1 1.9 -0.1 ● Complementary to 2SC4104 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base vo
4.15. 2sa1588.pdf Size:920K _kexin
SMD Type Transistors PNP Transistors 2SA1588 ■ Features ● Excellent hFE linearity : hFE (2) = 25 (min) at VCE = -6 V, IC = -400 mA ● Complementary to 2SC4118 1.Base 2.Emitter 3.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -35 Collector - Emitter Voltage VCEO -30 V Emitter - Base Voltage VEBO -5 Collector
4.16. 2sa1587.pdf Size:1603K _kexin
SMD Type Transistors PNP Transistors 2SA1587 ■ Features ● High voltage ● Low noise ● Complementary to 2SC4117 ● Small Package 1.Base 2.Emitter 3.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC
4.17. 2sa1586.pdf Size:1130K _kexin
SMD Type Transistors PNP Transistors 2SA1586 ■ Features ● High DC Current Gain ● High Voltage and High Current. ● Complementary to 2SC4116 ● Small Package 1.Base 2.Emitter 3.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collec
Datasheet: 2N3187 , 2N3188 , 2N3189 , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , TIP122 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 .
