2SA1620 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA1620
SMD Transistor Code: DO_DY
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO236
2SA1620 Transistor Equivalent Substitute - Cross-Reference Search
2SA1620 Datasheet (PDF)
2sa1620.pdf
2SA1620 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1620 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC4209 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -80 VCollector-emitter voltage VCEO -80 VEmitter-base voltage VEBO -5 VCollector current IC -300 mABase current IB -60
2sa1620.pdf
SMD Type TransistorsPNP Transistors2SA1620SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=-300mA1 2 Collector Emitter Voltage VCEO=-80V+0.1+0.050.95 -0.1 0.1 -0.01+0.1 Complementary to 2SC4209 1.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collect
2sa1621.pdf
2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1621 Audio Power Amplifier Applications Unit: mm High hFE: h = 100~320 FE Complementary to 2SC4210 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -35 VCollector-emitter voltage VCEO -30 VEmitter-base voltage VEBO -5 VCollector current IC -
2sa1627.pdf
UTC 2SA1627 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627 is designed for general purpose amplifier and high speed switching applications. FEATURES *High voltage *Low collector saturation voltage. *High-speed switching 1TO-126 1:EMITTER 2:COLLECTOR 3:BASEABSOLUTE MAXIMUM RATINGS ( Ta=25C ) PARAMETER SYMBOL VALUE UNIT
2sa1627a.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SA1627A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. FEATURES * High voltage * Low collector saturation voltage. * High-speed switching ORDERING INFORMATION Ordering Number Pin Assignment Package Packing
2sa1621.pdf
SMD Type TransistorsPNP Transistors2SA1621SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=-800mA1 2 Collector Emitter Voltage VCEO=-30V+0.050.95+0.1-0.1 0.1 -0.01 Complementary to 2SC4210 1.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
