2SA1620 Specs and Replacement
Type Designator: 2SA1620
SMD Transistor Code: DO_DY
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO236
2SA1620 Substitution
- BJT ⓘ Cross-Reference Search
2SA1620 datasheet
2SA1620 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1620 Audio Frequency Amplifier Applications Unit mm Complementary to 2SC4209 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -5 V Collector current IC -300 mA Base current IB -60 ... See More ⇒
SMD Type Transistors PNP Transistors 2SA1620 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=-300mA 1 2 Collector Emitter Voltage VCEO=-80V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 Complementary to 2SC4209 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collect... See More ⇒
2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1621 Audio Power Amplifier Applications Unit mm High hFE h = 100 320 FE Complementary to 2SC4210 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Collector current IC -... See More ⇒
Detailed specifications: 2SA1613, 2SA1614, 2SA1615, 2SA1616, 2SA1617, 2SA1618, 2SA1619, 2SA162, 2222A, 2SA1621, 2SA1622, 2SA1623, 2SA1624, 2SA1625, 2SA1626, 2SA1627, 2SA1628
Keywords - 2SA1620 pdf specs
2SA1620 cross reference
2SA1620 equivalent finder
2SA1620 pdf lookup
2SA1620 substitution
2SA1620 replacement
